Taiwan semiconductor manufacturing company, ltd. (20240177996). FLUORINE INCORPORATION METHOD FOR NANOSHEET simplified abstract
Contents
- 1 FLUORINE INCORPORATION METHOD FOR NANOSHEET
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FLUORINE INCORPORATION METHOD FOR NANOSHEET - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FLUORINE INCORPORATION METHOD FOR NANOSHEET
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Lung-Kun Chu of New Taipei City (TW)
Huang-Lin Chao of Hillsboro OR (US)
FLUORINE INCORPORATION METHOD FOR NANOSHEET - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240177996 titled 'FLUORINE INCORPORATION METHOD FOR NANOSHEET
Simplified Explanation
The method described in the abstract involves a series of steps to fabricate a device with nanostructures, source/drain regions, gate dielectric, and conductive materials.
- Form a plurality of nanostructures on a substrate
- Etch the nanostructures to create recesses
- Create source/drain regions in the recesses
- Remove some nanostructures, leaving others intact
- Deposit gate dielectric over and around the remaining nanostructures
- Apply a protective material over the gate dielectric
- Perform a fluorine treatment on the protective material
- Remove the protective material
- Deposit a first conductive material over the gate dielectric
- Deposit a second conductive material over the first conductive material
Potential Applications
This technology can be applied in the fabrication of advanced electronic devices, sensors, and integrated circuits.
Problems Solved
This method solves the problem of creating precise and efficient nanostructures for electronic components.
Benefits
The benefits of this technology include improved performance, miniaturization, and increased functionality of electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include semiconductor manufacturing, nanotechnology research, and electronics industry.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods in the fabrication of nanoscale devices in the semiconductor industry.
Unanswered Questions
How does this method compare to existing techniques for nanostructure fabrication?
This article does not provide a direct comparison to existing techniques, leaving the reader to wonder about the advantages and disadvantages of this new method.
What are the specific parameters for the deposition of the conductive materials in this process?
The article does not detail the specific parameters for the deposition of the conductive materials, leaving a gap in understanding the precise implementation of this step.
Original Abstract Submitted
a method includes forming a plurality of nanostructures over a substrate; etching the plurality of nanostructures to form recesses; forming source/drain regions in the recesses; removing first nanostructures of the plurality of nanostructures leaving second nanostructures of the plurality of nanostructures; depositing a gate dielectric over and around the second nanostructures; depositing a protective material over the gate dielectric; performing a fluorine treatment on the protective material; removing the protective material; depositing a first conductive material over the gate dielectric; and depositing a second conductive material over the first conductive
