Taiwan semiconductor manufacturing company, ltd. (20240177995). Semiconductor Patterning and Resulting Structures simplified abstract
Contents
- 1 Semiconductor Patterning and Resulting Structures
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Patterning and Resulting Structures - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Semiconductor Patterning and Resulting Structures
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Ming Lung of Hsinchu (TW)
Semiconductor Patterning and Resulting Structures - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240177995 titled 'Semiconductor Patterning and Resulting Structures
Simplified Explanation
The method described in the abstract involves depositing a hard mask over a target layer, which includes depositing a first hard mask layer with a certain density and then depositing a second hard mask layer with a higher density over the first layer. The process also includes forming mandrels over the hard mask, depositing a spacer layer, patterning the spacer layer to create spacers on the mandrels, removing the mandrels, transferring the patterned spacers to the hard mask, and finally patterning the target layer using the hard mask as a mask.
- Depositing a hard mask over a target layer
- Using a first hard mask layer with a certain density
- Depositing a second hard mask layer with a higher density
- Forming mandrels over the hard mask
- Depositing a spacer layer and patterning it to create spacers
- Transferring the patterned spacers to the hard mask
- Patterning the target layer using the hard mask as a mask
Potential Applications
This technology could be applied in semiconductor manufacturing, specifically in the fabrication of advanced integrated circuits.
Problems Solved
This method helps in achieving precise patterning and etching of target layers in semiconductor devices, improving overall device performance.
Benefits
The use of multiple hard mask layers and spacers allows for more intricate and accurate patterning, leading to higher quality semiconductor devices.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of high-performance microprocessors for various electronic devices.
Possible Prior Art
Prior art in semiconductor manufacturing may include similar methods of patterning and etching target layers using hard masks and spacers.
Unanswered Questions
How does this method compare to traditional patterning techniques in terms of efficiency and accuracy?
This article does not provide a direct comparison between this method and traditional patterning techniques.
What are the limitations of using multiple hard mask layers and spacers in semiconductor manufacturing?
The article does not address any potential limitations or challenges associated with using multiple hard mask layers and spacers in the fabrication process.
Original Abstract Submitted
a method includes depositing a hard mask over a target layer. depositing the hard mask includes depositing a first hard mask layer having a first density and depositing a second hard mask layer over the first hard mask layer, the second hard mask layer having a second density greater than the first density. the method further includes forming a plurality of mandrels over the hard mask; depositing a spacer layer over and along sidewalls of the plurality of mandrels; patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels; after patterning the spacer layer, removing the plurality of mandrels; transferring a patterning the plurality of spacers to the hard mask; and patterning the target layer using the hard mask as a mask.
