Taiwan semiconductor manufacturing company, ltd. (20240136008). METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract

METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Hung-Chang Yu of Hsin-Chu (TW)

METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240136008 titled 'METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN

Simplified Explanation

The memory device described in the patent application includes a memory array, a reference voltage generator, and a driver circuit. The reference voltage generator generates a reference voltage based on the threshold voltage of a select transistor in the memory cell, while the driver circuit generates a bit line voltage and/or a word line voltage based on the reference voltage to drive the memory cell. The reference voltage generator includes a resistor that senses the threshold voltage of the select transistor through current flowing through it.

• Memory device with memory array, reference voltage generator, and driver circuit
• Reference voltage generator generates reference voltage based on threshold voltage of select transistor
• Driver circuit generates bit line voltage and/or word line voltage to drive memory cell
• Reference voltage generator includes resistor to sense threshold voltage of select transistor

Potential Applications

The technology described in this patent application could be applied in:

• Solid-state drives
• Embedded systems
• Consumer electronics

Problems Solved

This technology helps in:

• Improving memory cell performance
• Enhancing memory device reliability
• Reducing power consumption

Benefits

The benefits of this technology include:

• Faster data access
• Higher data storage capacity
• Extended device lifespan

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Memory chip manufacturing
• Data storage industry
• Semiconductor market

Possible Prior Art

One possible prior art related to this technology is the use of reference voltage generators in memory devices to optimize performance and reliability.

How does the resistor in the reference voltage generator sense the threshold voltage of the select transistor?

The resistor in the reference voltage generator senses the threshold voltage of the select transistor by measuring the current flowing through it. This current is directly proportional to the threshold voltage, allowing the resistor to accurately sense it.

What are the specific parameters used to generate the bit line voltage and word line voltage in the driver circuit?

The specific parameters used to generate the bit line voltage and word line voltage in the driver circuit are determined based on the reference voltage generated by the reference voltage generator. These parameters may include voltage levels, timing, and signal strength to ensure proper operation of the memory cell.

Original Abstract Submitted

a memory device includes a memory array, a reference voltage generator and a driver circuit. the memory array includes a memory cell. the reference voltage generator is configured to generate a reference voltage based on a threshold voltage of a select transistor of the memory cell. the driver circuit is coupled to the reference voltage generator and is configured to generate at least one of a bit line voltage and a word line voltage according to the reference voltage, wherein the memory cell is driven by the at least one of the bit line voltage or the word line voltage, and the reference voltage generator comprises a resistor that is configured to sense the threshold voltage of the select transistor through a current flowing through the resistor.