Taiwan semiconductor manufacturing company, ltd. (20240121935). MULTIPATTERNING GATE PROCESSING simplified abstract
Contents
- 1 MULTIPATTERNING GATE PROCESSING
MULTIPATTERNING GATE PROCESSING
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yu-Hsien Lin of Kaohsiung (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
MULTIPATTERNING GATE PROCESSING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121935 titled 'MULTIPATTERNING GATE PROCESSING
Simplified Explanation
Methods for fabricating semiconductor structures involve forming transistor structures with nanosheets, depositing metal and coating over the structures, applying a mask, and etching the unmasked portions using a dry etching process.
- Forming transistor structures with nanosheets
- Depositing metal and coating over the structures
- Applying a mask to define a pattern
- Etching the unmasked portions using a dry etching process
Potential Applications
The technology can be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for electronic devices.
Problems Solved
This technology solves the problem of achieving precise patterning and etching of semiconductor structures with nanosheets, which is crucial for the performance and reliability of semiconductor devices.
Benefits
The benefits of this technology include improved device performance, increased device density, and enhanced reliability of semiconductor structures.
Potential Commercial Applications
The technology can be commercially applied in the production of next-generation electronic devices, data storage systems, and communication devices.
Possible Prior Art
One possible prior art could be the use of traditional lithography and etching techniques for patterning semiconductor structures, which may not be as precise or efficient as the methods described in this patent application.
What are the potential environmental impacts of using this technology?
The potential environmental impacts of using this technology include the generation of electronic waste from the production and disposal of semiconductor devices. Additionally, the use of certain chemicals and materials in the fabrication process may have environmental implications.
How does this technology compare to existing methods in terms of cost-effectiveness?
This technology may offer cost-effectiveness in terms of improved process efficiency, reduced material wastage, and enhanced device performance compared to existing methods. However, the initial investment in equipment and training for implementing this technology may impact cost-effectiveness in the short term.
Original Abstract Submitted
methods for fabricating semiconductor structures are provided. an exemplary method includes forming a first transistor structure and a second transistor structure over a substrate, wherein each transistor structure includes at least one nanosheet. the method further includes depositing a metal over each transistor structure and around each nanosheet; depositing a coating over the metal; depositing a mask over the coating; and patterning the mask to define a patterned mask, wherein the patterned mask lies over a masked portion of the coating and the second transistor structure, and wherein the patterned mask does not lie over an unmasked portion of the coating and the first transistor structure. the method further includes etching the unmasked portion of the coating and the metal over the first transistor structure using a dry etching process with a process pressure of from 30 to 60 (mtorr).
