Taiwan semiconductor manufacturing company, ltd. (20240120639). Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit simplified abstract
Contents
- 1 Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Po-Hsiang Huang of Tainan City (TW)
Fong-Yuan Chang of Hsinchu County (TW)
Tsui-Ping Wang of Zhubei City (TW)
Yi-Shin Chu of Hsinchu City (TW)
Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120639 titled 'Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit
Simplified Explanation
The abstract describes a 3D IC package with multiple IC dies stacked together and connected through through-silicon vias (TSVs) with a protection module within the TSV cell.
- First IC die with a substrate at the back side
- Second IC die stacked on top of the first die and facing the substrate
- TSV through the substrate connecting the IC dies
- Protection module within the TSV cell, electrically connected to the TSV
Potential Applications
The technology can be applied in:
- High-performance computing
- Data centers
- Networking equipment
Problems Solved
This technology helps in:
- Increasing performance by reducing interconnect delays
- Enhancing system integration
- Improving overall efficiency
Benefits
The benefits of this technology include:
- Higher data transfer speeds
- Reduced power consumption
- Compact design for space-saving
Potential Commercial Applications
The technology can be commercially applied in:
- Server systems
- Telecommunication infrastructure
- Automotive electronics
Possible Prior Art
One possible prior art could be the use of TSVs in 3D IC packaging to improve interconnectivity and performance.
Unanswered Questions
How does this technology compare to traditional 2D IC packaging methods?
This technology offers higher performance and efficiency compared to traditional 2D IC packaging methods due to the stacked design and TSVs for improved connectivity.
What are the challenges in mass production of 3D IC packages with protection modules?
The challenges in mass production may include ensuring uniformity in protection module fabrication, optimizing TSV connections, and managing heat dissipation in the stacked IC dies.
Original Abstract Submitted
a 3d ic package is provided. the 3d ic package includes: a first ic die comprising a first substrate at a back side of the first ic die; a second ic die stacked at the back side of the first ic die and facing the first substrate; a tsv through the first substrate and electrically connecting the first ic die and the second ic die, the tsv having a tsv cell including a tsv cell boundary surrounding the tsv; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the tsv, and the protection module is within the tsv cell.
