Taiwan semiconductor manufacturing company, ltd. (20240120402). SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jia-Ni Yu of New Taipei City (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

Mao-Lin Huang of Hsinchu (TW)

Lung-Kun Chu of New Taipei City (TW)

Chung-Wei Hsu of Hsinchu (TW)

Chun-Fu Lu of Hsinchu (TW)

Chih-Hao Wang of Hsinchu (TW)

Kuan-Lun Cheng of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240120402 titled 'SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Simplified Explanation

The semiconductor device structure described in the abstract includes a first dielectric feature, a first semiconductor layer, a second dielectric feature, and a first gate electrode layer with a first air gap.

• The first dielectric feature consists of a first dielectric layer with two opposing sidewalls.
• The first semiconductor layer is positioned adjacent to one of the sidewalls of the first dielectric feature.
• The second dielectric feature is located adjacent to the first semiconductor layer.
• The first gate electrode layer surrounds at least three surfaces of the first semiconductor layer, with a portion exposed to a first air gap.

Potential Applications

This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and memory devices.

Problems Solved

This innovation addresses the need for improved semiconductor device structures with enhanced performance, efficiency, and reliability.

Benefits

The benefits of this technology include increased functionality, higher speed, reduced power consumption, and improved overall performance of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could include the production of next-generation processors, memory chips, and other advanced electronic components for consumer electronics, telecommunications, and automotive industries.

Possible Prior Art

One possible prior art could be the use of similar dielectric features and gate electrode layers in semiconductor device structures, but with variations in the specific configuration and materials used.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this innovation.

What are the specific fabrication processes involved in creating this semiconductor device structure?

The article does not detail the specific fabrication methods or techniques used to form the described semiconductor device structure, leaving a gap in understanding the manufacturing process.

Original Abstract Submitted

a semiconductor device structure, along with methods of forming such, are described. the semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.