Taiwan semiconductor manufacturing company, ltd. (20240120381). SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract

SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ding-Kang Shih of Hsinchu (TW)

SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240120381 titled 'SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes a channel structure with multiple channel features connecting two source/drain features. The source/drain features contain stressor elements that apply stress to the channel features, resulting in improved performance.

• The semiconductor device has a channel structure with multiple channel features connecting two source/drain features.
• The source/drain features contain stressor elements that apply stress to the channel features.
• The stressor elements have an atomic radius different from that of the second semiconductor elements.
• Lattice defects are present in the source/drain features to enhance the stress applied to the channel features.

Potential Applications

This technology could be applied in:

• Advanced semiconductor devices
• High-performance electronics
• Next-generation processors

Problems Solved

This technology addresses issues such as:

• Improving performance of semiconductor devices
• Enhancing stress application for better functionality
• Increasing efficiency in electronic components

Benefits

The benefits of this technology include:

• Improved performance and efficiency in semiconductor devices
• Enhanced stress application leading to better functionality
• Potential for advancements in electronic technology

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

• Semiconductor manufacturing industry
• Electronics and consumer technology sector
• Research and development for advanced electronic components

Possible Prior Art

One possible prior art could be the use of stressor elements in semiconductor devices to enhance performance and functionality.

How does this technology compare to existing stressor element technologies in semiconductor devices?

This technology introduces a unique approach to applying stress to channel features in semiconductor devices. It would be interesting to compare its effectiveness and efficiency with other existing stressor element technologies.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?

While the benefits of this technology are clear, there may be challenges in scaling up production and integrating it into existing semiconductor manufacturing processes. Understanding these challenges is crucial for successful adoption of the technology.

Original Abstract Submitted

a semiconductor device includes a channel structure including a plurality of channel features which are spaced apart from each other, and which include first semiconductor elements, and two source/drain features disposed at two opposite sides of the channel structure such that each of the channel features interconnects the source/drain features. a major portion of each of the source/drain features includes second semiconductor elements, stressor elements which have an atomic radius different from that of the second semiconductor elements, and which are present in an amount sufficient to permit the source/drain features to apply a first stress to the channel features, and a certain degree of lattice defects present such that the source/drain features including the stressor elements apply a second stress to the channel features. the second stress is opposite to the first stress. a method for manufacturing the semiconductor device is also disclosed.