Taiwan semiconductor manufacturing company, ltd. (20240120377). TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract
TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120377 titled 'TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF
Simplified Explanation
The patent application describes semiconductor structures and processes involving two different gate isolation structures with varying compositions and heights. The first gate isolation structure is formed on a dielectric wall with nanostructure channel regions, while the second gate isolation structure is formed on a shallow trench isolation feature. The first gate isolation structure is shorter than the second gate isolation structure, and they may have different compositions. In some cases, the first gate isolation structure is formed concurrently with gate spacers.
- Explanation of the patent/innovation:
- Two different gate isolation structures with varying compositions and heights are utilized in semiconductor structures. - The first gate isolation structure is formed on a dielectric wall with nanostructure channel regions. - The second gate isolation structure is formed on a shallow trench isolation feature. - The first gate isolation structure is shorter than the second gate isolation structure. - The compositions of the two gate isolation structures may differ. - In certain implementations, the first gate isolation structure is formed concurrently with gate spacers.
- Potential Applications:
- Advanced semiconductor devices - High-performance integrated circuits - Nanotechnology applications
- Problems Solved:
- Improved gate isolation in semiconductor structures - Enhanced performance and reliability of electronic devices - Better control over channel regions in nanostructures
- Benefits:
- Increased efficiency in semiconductor manufacturing - Enhanced functionality of electronic devices - Potential for smaller and more powerful devices
- Potential Commercial Applications:
- Optimizing Semiconductor Manufacturing Processes for Enhanced Gate Isolation
- Potential Commercial Applications:
- Possible Prior Art:
- Previous patents or publications related to gate isolation structures in semiconductor devices
- Unanswered Questions:
- How does the different composition of the gate isolation structures impact device performance?
The patent application does not provide specific details on how the composition differences affect device performance. Further research or testing may be needed to determine the exact impact.
- Are there any limitations to the concurrent formation of the first gate isolation structure with gate spacers?
The patent application does not address any potential limitations or challenges that may arise from the concurrent formation process. Additional studies or experiments may be required to identify any drawbacks.
Original Abstract Submitted
semiconductor structures and processes are provided that include a first gate isolation structure and a second gate isolation structure. the first gate isolation structure may be formed on a dielectric wall from which nanostructure channel regions extend. the second gate isolation structure may be formed on a shallow trench isolation feature. the height of the first gate isolation structure is less than the height of the second gate isolation structure. the composition of the first gate isolation structure may be different than the composition of the second gate isolation structure. in some implementations, the first gate isolation structure is formed concurrently with gate spacers.
