Taiwan semiconductor manufacturing company, ltd. (20240120363). PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming-Chyi Liu of Hsinchu City (TW)
Shih-Chang Liu of Alian Township (TW)
Ru-Liang Lee of Hsinchu City (TW)
PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120363 titled 'PIXEL SENSOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
Simplified Explanation
A self-aligned plug may be formed between deep trench isolation (DTI) etching cycles. Accordingly, etch depth in areas of a pixel sensor with large CDS (e.g., at an X-road) is reduced, which prevents trench loading. As a result, a floating diffusion (FD) region, associated with photodiodes of the pixel sensor, is not damaged during the DTI etching cycles. Reduced chances of damage to the FD region improve the performance of the pixel sensor and prevent electrical shorts and failures, which increases yield and conserves time and raw materials used in forming the pixel sensor.
- Explanation:
- Formation of self-aligned plug between DTI etching cycles - Reduction of etch depth in areas with large CDS to prevent trench loading - Protection of FD region during DTI etching cycles - Improved performance of pixel sensor and prevention of electrical shorts and failures
Potential Applications
The technology described in the patent application could be applied in the manufacturing of pixel sensors for various imaging devices, such as digital cameras, smartphones, and surveillance cameras.
Problems Solved
1. Damage to the FD region during DTI etching cycles 2. Electrical shorts and failures in pixel sensors
Benefits
1. Improved performance of pixel sensors 2. Increased yield in manufacturing process 3. Conservation of time and raw materials
Potential Commercial Applications
Optimizing Pixel Sensor Manufacturing Process for Enhanced Performance
Possible Prior Art
Prior art related to optimizing etching processes in semiconductor manufacturing may exist, but specific examples are not provided in the patent application.
Unanswered Questions
How does the technology impact the overall cost of manufacturing pixel sensors?
The patent application does not directly address the cost implications of implementing this technology in the manufacturing process.
Are there any specific design requirements for integrating this technology into existing pixel sensor fabrication processes?
The patent application does not detail any specific design requirements for incorporating this technology into current pixel sensor fabrication processes.
Original Abstract Submitted
a self-aligned plug may be formed between deep trench isolation (dti) etching cycles. accordingly, etch depth in areas of a pixel sensor with large cds (e.g., at an x-road) is reduced, which prevents trench loading. as a result, a floating diffusion (fd) region, associated with photodiodes of the pixel sensor, is not damaged during the dti etching cycles. reduced chances of damage to the fd region improves performance of the pixel sensor and prevents electrical shorts and failures, which increases yield and conserves time and raw materials used in forming the pixel sensor.
