Taiwan semiconductor manufacturing company, ltd. (20240118618). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Chih Ho of Taichung City (TW)
Ching-Yu Chang of Yuansun Village (TW)
Chin-Hsiang Lin of Hsinchu (TW)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240118618 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device involving the formation of multiple layers with specific properties.
- The first layer is made of an organic material over a substrate.
- The second layer is formed over the first layer and contains a silicon-containing polymer with pendant acid groups or pendant photoacid generator groups.
- The second layer is created by reacting a material containing an acid group or photoacid generator group with a silicon-based polymer, resulting in an upper layer with desired properties.
- A photosensitive layer is then formed over the second layer and patterned for further processing.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, sensors, and other electronic components.
Problems Solved
This method helps in improving the performance and reliability of semiconductor devices by providing precise control over the properties of the different layers, enhancing their functionality.
Benefits
The benefits of this technology include increased efficiency in semiconductor manufacturing processes, improved device performance, and potentially lower production costs.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the production of high-performance electronic devices, leading to advancements in various fields such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of similar methods involving the formation of multiple layers with specific properties in semiconductor manufacturing processes.
Unanswered Questions
How does this method compare to existing techniques in terms of efficiency and cost-effectiveness?
This article does not provide a direct comparison with existing techniques in terms of efficiency and cost-effectiveness.
What are the specific semiconductor devices that can benefit the most from this technology?
The article does not specify the specific semiconductor devices that can benefit the most from this technology.
Original Abstract Submitted
a method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. a second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. the forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. a photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.
