Taiwan semiconductor manufacturing company, ltd. (20240114702). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Han-Jong Chia of Hsinchu City (TW)
Shih-Peng Tai of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240114702 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a transistor, interconnection structure, bonding pad, magnetic tunnel junction (MTJ) structure, conductive line, and substrates. The MTJ structure is stacked on the bonding pad and includes a free layer, tunnel barrier layer, and synthetic antiferromagnet layer. The conductive line is placed on the MTJ structure, and the second substrate is placed on the conductive line.
- Transistor formed on the first substrate
- Interconnection structure electrically connected to the transistor
- Bonding pad electrically connected to the interconnection structure
- MTJ structure stacked on the bonding pad
- Conductive line placed on the MTJ structure
- Second substrate placed on the conductive line
Potential Applications
The technology described in this patent application could be applied in:
- Magnetic memory devices
- Spintronics applications
Problems Solved
This technology helps in:
- Improving data storage and retrieval speed
- Enhancing memory density
Benefits
The benefits of this technology include:
- Increased data storage capacity
- Faster data access times
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Data centers
- Consumer electronics
Possible Prior Art
One possible prior art for this technology could be:
- Magnetic tunnel junction structures in memory devices
Unanswered Questions
How does this technology compare to existing memory technologies in terms of speed and capacity?
The article does not provide a direct comparison between this technology and existing memory technologies.
Are there any limitations or drawbacks to implementing this technology in practical applications?
The article does not mention any limitations or drawbacks associated with implementing this technology.
Original Abstract Submitted
a semiconductor device includes a first substrate, a transistor, an interconnection structure, a first bonding pad, a magnetic tunnel junction (mtj) structure, a conductive line and a second substrate. the transistor is formed on the first substrate. the interconnection structure is formed on the first substrate and electrically connected to the transistor. the first bonding pad is formed on and electrically connected to the interconnection structure. the mtj structure is disposed on and electrically connected to the first bonding pad, wherein the mtj structure comprises a free layer, a tunnel barrier layer, a synthetic antiferromagnet layer sequentially stacked up over the first bonding pad. the conductive line is disposed on the mtj structure. the second substrate is disposed on the conductive line.
