Taiwan semiconductor manufacturing company, ltd. (20240113222). THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS simplified abstract
Contents
- 1 THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yan-Yi Chen of Taipei City (TW)
Wu-Wei Tsai of Taoyuan City (TW)
Yu-Ming Hsiang of New Taipei City (TW)
Hai-Ching Chen of Hsinchu City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chung-Te Lin of Tainan City (TW)
THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113222 titled 'THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS
Simplified Explanation
The patent application relates to a thin film transistor with a gate electrode structure having different work functions.
- The thin film transistor includes an active layer over a substrate.
- An insulator is stacked with the active layer.
- A gate electrode structure is stacked with the insulator, consisting of a gate material layer with a first work function and a first interfacial layer directly between the insulator and the gate material layer.
- The gate electrode structure has a second work function that is different from the first work function.
Potential Applications
This technology could be applied in the manufacturing of high-performance electronic devices such as displays, sensors, and integrated circuits.
Problems Solved
This technology solves the problem of achieving better performance and efficiency in thin film transistors by controlling the work functions of the gate electrode structure.
Benefits
The benefits of this technology include improved device performance, increased efficiency, and potentially lower power consumption in electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of advanced displays, sensors, and other electronic devices for consumer electronics, medical devices, and industrial equipment.
Possible Prior Art
One possible prior art could be the use of different materials in the gate electrode structure to control the work functions in thin film transistors.
What materials are used in the gate electrode structure to achieve different work functions?
The article does not specify the exact materials used in the gate electrode structure to achieve different work functions.
How does the different work functions in the gate electrode structure impact the overall performance of the thin film transistor?
The article does not provide information on how the different work functions in the gate electrode structure impact the overall performance of the thin film transistor.
Original Abstract Submitted
some embodiments relate to a thin film transistor comprising an active layer over a substrate. an insulator is stacked with the active layer. a gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. the first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.
