Taiwan semiconductor manufacturing company, ltd. (20240113202). Low-K Gate Spacer and Methods for Forming the Same simplified abstract

Low-K Gate Spacer and Methods for Forming the Same

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wen-Kai Lin of Yilan (TW)

Bo-Yu Lai of Taipei City (TW)

Li Chun Te of Renwu Township (TW)

Kai-Hsuan Lee of Hsinchu (TW)

Sai-Hooi Yeong of Zhubei City (TW)

Tien-I Bao of Taoyuan City (TW)

Wei-Ken Lin of Tainan City (TW)

Low-K Gate Spacer and Methods for Forming the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113202 titled 'Low-K Gate Spacer and Methods for Forming the Same

Simplified Explanation

The present disclosure relates to a FinFET device with gate spacers designed to reduce capacitance, as well as methods for forming the device. The gate spacers are created through multiple depositions of different materials at various stages of processing, ultimately decreasing parasitic capacitance between gate structures and contacts added post-epitaxy growth of source/drain regions.

• Gate spacers with reduced capacitance:

   - Formed by two or more depositions of different materials
   - Reduces parasitic capacitance between gate structures and contacts
   - Enhances performance of the FinFET device

• Methods for forming the FinFET device:

   - Involves depositing first and second materials at different processing stages
   - Improves overall device efficiency and functionality

Potential Applications

The technology can be applied in: - Semiconductor manufacturing - Integrated circuits - Electronics industry

Problems Solved

- Reduced parasitic capacitance - Enhanced device performance - Improved efficiency in FinFET devices

Benefits

- Higher performance - Lower power consumption - Increased reliability

Potential Commercial Applications

"Reduced Capacitance Gate Spacers in FinFET Devices" for: - Semiconductor companies - Electronics manufacturers - Research institutions

Possible Prior Art

Prior art related to gate spacer technology in semiconductor devices, but not specifically addressing reduced capacitance in FinFET devices.

Unanswered Questions

How does the reduced capacitance affect the overall power consumption of the FinFET device?

The reduced capacitance in the gate spacers can potentially lead to lower power consumption due to decreased parasitic effects, but the exact impact on power efficiency needs further investigation.

Are there any limitations to the materials that can be used for the gate spacers in this technology?

While the abstract mentions using different materials for the gate spacers, it does not specify any limitations or constraints on the types of materials that can be utilized. Further research may be needed to explore the range of materials suitable for this application.

Original Abstract Submitted

embodiments of the present disclosure relate to a finfet device having gate spacers with reduced capacitance and methods for forming the finfet device. particularly, the finfet device according to the present disclosure includes gate spacers formed by two or more depositions. the gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.