Taiwan semiconductor manufacturing company, ltd. (20240113201). MULTI-GATE DEVICE INNER SPACER AND METHODS THEREOF simplified abstract

MULTI-GATE DEVICE INNER SPACER AND METHODS THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chih-Ching Wang of Kinmen County (TW)

Wei-Yang Lee of Taipei City (TW)

Bo-Yu Lai of Taipei City (TW)

Chung-I Yang of Hsinchu City (TW)

Sung-En Lin of Hsinchu County (TW)

MULTI-GATE DEVICE INNER SPACER AND METHODS THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113201 titled 'MULTI-GATE DEVICE INNER SPACER AND METHODS THEREOF

Simplified Explanation

Methods and structures for modulating an inner spacer profile involve using a fin with an epitaxial layer stack containing semiconductor channel layers and dummy layers. The process includes removing the dummy layers to create a gap between the semiconductor channel layers, depositing a dielectric layer to fill the gap, etching the dielectric layer to form v-shaped recesses, and creating a v-shaped inner spacer within the recesses.

• Fin with epitaxial layer stack
• Removal of dummy layers to create a gap
• Deposition of dielectric layer to fill the gap
• Etching of dielectric layer to form v-shaped recesses
• Formation of v-shaped inner spacer within the recesses

Potential Applications

The technology can be applied in semiconductor manufacturing processes to enhance the performance of transistors by modulating the inner spacer profile.

Problems Solved

This innovation addresses the challenge of improving the efficiency and functionality of semiconductor devices by optimizing the inner spacer profile.

Benefits

The benefits of this technology include increased transistor performance, enhanced device reliability, and improved overall semiconductor device functionality.

Potential Commercial Applications

The technology can be utilized in the production of advanced semiconductor devices for various industries, including electronics, telecommunications, and computing.

Possible Prior Art

One possible prior art could be the use of different spacer profiles in semiconductor devices to improve device performance. However, the specific method of modulating an inner spacer profile as described in this patent application may be a novel approach.

How does this technology compare to existing methods of spacer modulation in semiconductor manufacturing processes?

The article does not provide a direct comparison to existing methods, so it is unclear how this technology differs or improves upon current practices.

What are the potential limitations or challenges in implementing this method on a large scale in semiconductor production facilities?

The article does not address the scalability or practicality of implementing this method in industrial settings, leaving questions about the feasibility of mass production using this technique.

Original Abstract Submitted

methods and structures for modulating an inner spacer profile include providing a fin having an epitaxial layer stack including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. in some embodiments, the method further includes removing the plurality of dummy layers to form a first gap between adjacent semiconductor channel layers of the plurality of semiconductor channel layers. thereafter, in some examples, the method includes conformally depositing a dielectric layer to substantially fill the first gap between the adjacent semiconductor channel layers. in some cases, the method further includes etching exposed lateral surfaces of the dielectric layer to form an etched-back dielectric layer that defines substantially v-shaped recesses. in some embodiments, the method further includes forming a substantially v-shaped inner spacer within the substantially v-shaped recesses.