Taiwan semiconductor manufacturing company, ltd. (20240113187). COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE simplified abstract

COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhu-Min Song of Nantou City (TW)

Ying-Chou Chen of Taichung City (TW)

Yi-Kai Ciou of Taoyuan City (TW)

Chien-Chih Chou of New Taipei City (TW)

Fei-Yun Chen of Hsinchu (TW)

Yu-Chang Jong of Hsinchu City (TW)

Chi-Te Lin of Hsinchu City (TW)

COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113187 titled 'COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE

Simplified Explanation

The present disclosure is about an integrated chip with a unique structure involving gate dielectrics and gate electrodes.

• The integrated chip includes a substrate with a recess on its upper surface.
• Source/drain regions are located on opposing sides of the recess within the substrate.
• A first gate dielectric lines the interior surfaces of the recess.
• A second gate dielectric is placed on the first gate dielectric within the recess.
• A gate electrode is positioned on the second gate dielectric.
• The second gate dielectric has protrusions extending outward from its upper surface along opposing sides.

Potential Applications

This technology could be applied in:

• Semiconductor manufacturing
• Integrated circuit design
• Electronic devices

Problems Solved

This innovation addresses:

• Improved performance of integrated chips
• Enhanced functionality of electronic devices
• Increased efficiency in semiconductor manufacturing

Benefits

The benefits of this technology include:

• Higher processing speeds
• Lower power consumption
• Smaller chip sizes

Potential Commercial Applications

This technology could be utilized in:

• Mobile devices
• Computers
• Automotive electronics

Possible Prior Art

One possible prior art could be the use of gate dielectrics and gate electrodes in integrated circuits, but the specific structure described in this disclosure may be novel.

How does this technology compare to existing integrated chip structures in terms of performance and efficiency?

This article provides a detailed description of the integrated chip structure but does not directly compare its performance and efficiency to existing structures. Further research or testing may be needed to determine the advantages of this technology.

What are the potential challenges in implementing this integrated chip structure on a large scale in semiconductor manufacturing?

While the article outlines the structure of the integrated chip, it does not discuss the practical challenges that may arise in mass production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that are not addressed here.

Original Abstract Submitted

the present disclosure relates to an integrated chip. the integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. source/drain regions are disposed within the substrate on opposing sides of the recess. a first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. a gate electrode is disposed on the second gate dielectric. the second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.