Taiwan semiconductor manufacturing company, ltd. (20240113183). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Lung Hung of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113183 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The abstract describes methods for tuning effective work functions of gate electrodes in semiconductor devices. A semiconductor device includes a channel region, a gate dielectric layer, and a gate electrode with a first work function metal layer, a first work function tuning layer, and a fill material.
- Gate electrodes in semiconductor devices can have their work functions tuned for optimal performance.
- The gate electrode includes a first work function metal layer, a first work function tuning layer, and a fill material.
- The first work function metal layer contains aluminum, while the first work function tuning layer contains aluminum tungsten (AlW).
Potential Applications
The technology can be applied in the development of advanced semiconductor devices with improved performance and efficiency.
Problems Solved
This technology addresses the challenge of optimizing the work functions of gate electrodes in semiconductor devices for enhanced functionality.
Benefits
The benefits of this technology include increased efficiency, improved performance, and enhanced reliability of semiconductor devices.
Potential Commercial Applications
Potential commercial applications of this technology include the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
Prior art in the field of semiconductor device fabrication may include methods for tuning work functions of gate electrodes, but specific techniques involving aluminum and aluminum tungsten layers may be novel.
Unanswered Questions
How does the addition of aluminum tungsten in the work function tuning layer impact the overall performance of the semiconductor device?
The article does not provide detailed information on the specific effects of aluminum tungsten on the device performance.
Are there any limitations or drawbacks associated with the proposed methods for tuning work functions of gate electrodes?
The article does not address any potential limitations or drawbacks that may arise from implementing these methods.
Original Abstract Submitted
methods for tuning effective work functions of gate electrodes in semiconductor devices and semiconductor devices formed by the same are disclosed. in an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate dielectric layer over the channel region; and a gate electrode over the gate dielectric layer, the gate electrode including a first work function metal layer over the gate dielectric layer, the first work function metal layer including aluminum (al); a first work function tuning layer over the first work function metal layer, the first work function tuning layer including aluminum tungsten (alw); and a fill material over the first work function tuning layer.
