Taiwan semiconductor manufacturing company, ltd. (20240113173). SEMICONDUCTOR STRUCTURES AND METHODS THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURES AND METHODS THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Fu Cheng of Hsinchu County (TW)
Chung-Wei Wu of Hsin-Chu County (TW)
Zhiqiang Wu of Hsinchu County (TW)
SEMICONDUCTOR STRUCTURES AND METHODS THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113173 titled 'SEMICONDUCTOR STRUCTURES AND METHODS THEREOF
Simplified Explanation
The present disclosure is directed to a device with an active region on a semiconductor substrate, a gate structure perpendicular to the active region, and a source/drain feature connected to the channel in a hexagonal shape.
- Device with active region on semiconductor substrate
- Gate structure perpendicular to active region
- Source/drain feature connected to channel
- Source/drain feature projection resembles a hexagon
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications such as integrated circuits, sensors, and memory devices.
Problems Solved
This technology solves the problem of improving the performance and efficiency of semiconductor devices by optimizing the layout and design of the active region, gate structure, and source/drain feature.
Benefits
The benefits of this technology include enhanced device performance, increased functionality, and improved reliability in semiconductor devices. Additionally, the unique hexagonal shape of the source/drain feature can lead to better electrical characteristics.
Potential Commercial Applications
One potential commercial application of this technology could be in the manufacturing of high-performance microprocessors for computing devices. The optimized design of the device could also be beneficial in the production of advanced sensors for various industries.
Possible Prior Art
One possible prior art for this technology could be the development of semiconductor devices with similar active region, gate structure, and source/drain feature configurations. However, the specific design with a hexagonal projection of the source/drain feature may be a novel aspect of this innovation.
Unanswered Questions
How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device designs to evaluate the performance and efficiency improvements offered by this technology.
What specific electronic applications could benefit the most from the unique design features described in this patent application?
The article does not specify the specific electronic applications that could benefit the most from the design features outlined in this patent application.
Original Abstract Submitted
in one example aspect, the present disclosure is directed to a device. the device includes an active region on a semiconductor substrate. the active region extends along a first direction. the device also includes a gate structure on the active region. the gate structure extends along a second direction that is perpendicular to the first direction. moreover, the gate structure engages with a channel on the active region. the device further includes a source/drain feature on the active region and connected to the channel. a projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.
