Taiwan semiconductor manufacturing company, ltd. (20240112954). SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT simplified abstract
Contents
- 1 SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming-Hsun Lin of Hsinchu City (TW)
SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112954 titled 'SELF-ALIGNED CONTACT LANDING ON A METAL CIRCUIT
Simplified Explanation
The abstract describes an integrated circuit device with landing circuitry, including a stair-shaped profile that extends into a silicon substrate. The landing circuitry consists of electrode layers interspersed with dielectric material and spacer structures on the ends of the electrode layers.
- The integrated circuit device includes landing circuitry with a stair-shaped profile.
- The landing circuitry is part of a trench capacitor region.
- Electrode layers and dielectric material are present in the landing circuitry.
- Spacer structures are located on the ends of the electrode layers along the stair-shaped profile.
Potential Applications
The technology described in the patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuit design
- Memory devices
Problems Solved
The technology addresses the following issues:
- Improving the performance of integrated circuits
- Enhancing the efficiency of memory devices
- Increasing the density of components in semiconductor devices
Benefits
The technology offers the following benefits:
- Higher integration levels in semiconductor devices
- Improved reliability of memory devices
- Enhanced performance of integrated circuits
Potential Commercial Applications
The technology could find commercial applications in:
- Semiconductor industry
- Electronics manufacturing
- Memory chip production
Possible Prior Art
One possible prior art for this technology could be the use of spacer structures in semiconductor devices to improve performance and efficiency.
Unanswered Questions
How does this technology compare to existing landing circuitry designs in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing landing circuitry designs. Further research and testing would be needed to evaluate the performance and efficiency of this innovation in comparison to current designs.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges that may arise in scaling up the implementation of this technology in semiconductor manufacturing processes. Factors such as cost, compatibility with existing processes, and production scalability would need to be considered.
Original Abstract Submitted
some implementations described herein include an integrated circuit device including landing circuitry and methods of formation. the landing circuitry, which may be part of a trench capacitor region, includes a stair-shaped profile that extends into a silicon substrate of the integrated circuit device. the landing circuitry includes electrode layers of the trench capacitor region interspersed with layers of a dielectric material. the landing circuitry further includes spacer structures on ends of the electrode layers along the stair-shaped profile.
