Taiwan semiconductor manufacturing company, ltd. (20240107755). NON-VOLATILE MEMORY (NVM) CELL STRUCTURE TO INCREASE RELIABILITY simplified abstract
Contents
- 1 NON-VOLATILE MEMORY (NVM) CELL STRUCTURE TO INCREASE RELIABILITY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NON-VOLATILE MEMORY (NVM) CELL STRUCTURE TO INCREASE RELIABILITY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NON-VOLATILE MEMORY (NVM) CELL STRUCTURE TO INCREASE RELIABILITY
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shih-Hsien Chen of Zhubei City (TW)
Chun-Yao Ko of Hsinchu City (TW)
Felix Ying-Kit Tsui of Cupertino CA (US)
NON-VOLATILE MEMORY (NVM) CELL STRUCTURE TO INCREASE RELIABILITY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107755 titled 'NON-VOLATILE MEMORY (NVM) CELL STRUCTURE TO INCREASE RELIABILITY
Simplified Explanation
The semiconductor structure described in the abstract includes a first well region with a conductive structure, paired doped regions with different doping types, and offset second doped regions within the first well region.
- The semiconductor structure comprises a first well region with a conductive structure.
- Paired first doped regions with a different doping type are located on opposing sides of the conductive structure.
- Paired second doped regions with the same doping type as the first doped regions are laterally offset from the first doped regions by a non-zero distance within the first well region.
Potential Applications
This semiconductor structure could be used in:
- High-performance transistors
- Power management devices
- Integrated circuits requiring precise control of charge carriers
Problems Solved
- Improved control of charge carriers
- Enhanced performance and efficiency of semiconductor devices
- Reduction of leakage currents in transistors
Benefits
- Higher efficiency in power management
- Increased speed and performance in electronic devices
- Enhanced reliability and stability of integrated circuits
Potential Commercial Applications
Optimized Semiconductor Structure for Enhanced Performance and Efficiency
Possible Prior Art
Prior art may include:
- Semiconductor structures with similar configurations
- Patents related to precise control of charge carriers in devices
Unanswered Questions
How does the lateral offset of the second doped regions impact device performance?
The specific effects of the lateral offset on device characteristics and functionality need further investigation to fully understand its implications.
What manufacturing processes are used to create the described semiconductor structure?
Details on the fabrication techniques and materials involved in producing this semiconductor structure are not provided in the abstract. Further research or access to the full patent application would be necessary to address this question.
Original Abstract Submitted
various embodiments of the present disclosure are directed towards a semiconductor structure including a first well region disposed within a substrate and comprising a first doping type. a conductive structure overlies the first well region. a pair of first doped regions is disposed within the first well region on opposing sides of the conductive structure. the pair of first doped regions comprise a second doping type opposite the first doping type. a pair of second doped regions is disposed within the first well region on the opposing sides of the conductive structure. the pair of second doped regions comprise the second doping type and are laterally offset from the pair of first doped regions by a non-zero distance.
