Taiwan semiconductor manufacturing company, ltd. (20240105814). INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH simplified abstract
Contents
- 1 INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jiun-Ming Kuo of Taipei City (TW)
Ji-Yin Tsai of Hsinchu County (TW)
Yuan-Ching Peng of Hsinchu (TW)
INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105814 titled 'INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH
Simplified Explanation
The patent application describes a method for forming a semiconductor device with multiple layers, each containing different semiconductor elements at varying concentrations. The method involves removing a portion of the second layer to create a gap between the first and third layers, and then forming a spacer in the gap to enhance the device's performance.
- First layer formed over a substrate
- Second layer formed over the first layer with a different semiconductor element
- Third layer formed over the second layer
- Second layer has varying concentrations of the semiconductor element in different regions
- Source/drain trench formed to expose side surfaces of the layers
- Portion of the second layer removed to create a gap between the first and third layers
- Spacer formed in the gap
- Source/drain feature formed in the source/drain trench and on the sidewall of the spacer
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and sensors.
Problems Solved
This technology solves the problem of improving the performance and efficiency of semiconductor devices by optimizing the structure and composition of the layers within the device.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in electronic devices.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices, which could be used in consumer electronics, telecommunications, and automotive applications.
Possible Prior Art
One possible prior art could be the use of spacers in semiconductor device manufacturing to improve device performance and optimize the structure of the device. Another could be the technique of varying concentrations of semiconductor elements in different regions of a device to enhance its functionality.
Unanswered Questions
How does the method of removing a portion of the second layer impact the overall performance of the semiconductor device?
The removal of a portion of the second layer to create a gap may affect the electrical properties and stability of the device. Further research and testing are needed to understand the specific impact on device performance.
What are the potential challenges in scaling up this manufacturing process for mass production?
Scaling up the manufacturing process for mass production may pose challenges in terms of consistency, yield rates, and cost-effectiveness. Addressing these challenges will be crucial for the successful commercialization of this technology.
Original Abstract Submitted
a first layer is formed over a substrate; a second layer is formed over the first layer; and a third layer is formed over the second layer. the first and third layers each have a first semiconductor element; the second layer has a second semiconductor element different from the first semiconductor element. the second layer has the second semiconductor element at a first concentration in a first region and at a second concentration in a second region of the second layer. a source/drain trench is formed in a region of the stack to expose side surfaces of the layers. a first portion of the second layer is removed from the exposed side surface to form a gap between the first and the third layers. a spacer is formed in the gap. a source/drain feature is formed in the source/drain trench and on a sidewall of the spacer.
