Taiwan semiconductor manufacturing company, ltd. (20240105794). FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS simplified abstract
Contents
- 1 FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105794 titled 'FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS
Simplified Explanation
The abstract describes an integrated circuit with a semiconductor nanostructure transistor, featuring multiple semiconductor nanostructures serving as channel regions. A gate metal surrounds the semiconductor nanostructures, with varying gate length dimensions above the nanostructures compared to between them.
- The integrated circuit includes a semiconductor nanostructure transistor.
- The transistor comprises multiple semiconductor nanostructures acting as channel regions.
- A gate metal encloses the semiconductor nanostructures.
- The gate metal has different gate length dimensions above the nanostructures versus between them.
Potential Applications
The technology described in this patent application could have potential applications in the following areas:
- Nanoelectronics
- Semiconductor manufacturing
- Integrated circuit design
Problems Solved
The innovation addresses several issues in the field of semiconductor technology, such as:
- Improving transistor performance
- Enhancing gate control
- Increasing circuit density
Benefits
The technology offers various benefits, including:
- Higher efficiency
- Improved speed
- Enhanced reliability
Potential Commercial Applications
With its unique design and capabilities, this technology could find commercial applications in:
- Mobile devices
- Computer processors
- IoT devices
Possible Prior Art
One possible prior art in this field is the use of FinFET transistors, which also involve multiple gate structures for improved control and performance.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
The article does not provide a direct comparison with other transistor designs to evaluate its advantages and limitations.
What are the specific manufacturing processes required to implement this semiconductor nanostructure transistor?
The article does not delve into the detailed manufacturing processes involved in creating and integrating this innovative transistor design.
Original Abstract Submitted
an integrated circuit includes a semiconductor nanostructure transistor. the semiconductor nanostructure transistor includes a plurality of semiconductor nanostructures corresponding to channel regions conductor nanostructure transistor. a gate metal surrounds the semiconductor nanostructures. the gate metal has differing gate length dimension above the semiconductor nanostructures compared to the gate length between the semiconductor nanostructures.
