Taiwan semiconductor manufacturing company, ltd. (20240105772). INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105772 titled 'INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a device with multiple nanostructure devices, dielectric fins, isolation structures, and dielectric gate structures on a substrate with different device regions.
- The device includes a substrate with distinct device regions and a connecting region.
- Two nanostructure devices are positioned over the respective device regions on the substrate.
- Dielectric fins are located over one device region and the connecting region, in contact with a gate structure of one nanostructure device.
- Isolation structures are placed over the other device region, in contact with the second nanostructure device and the dielectric fin.
- Dielectric gate structures are positioned over the substrate between the device regions and the connecting region.
Potential Applications
This technology could be applied in the development of advanced electronic devices, sensors, and integrated circuits.
Problems Solved
This innovation helps in enhancing the performance and efficiency of nanostructure devices by providing improved isolation and gate structures.
Benefits
The device offers increased functionality, improved performance, and better integration of nanostructure devices on a substrate.
Potential Commercial Applications
The technology could find applications in the semiconductor industry, nanotechnology research, and the development of high-performance electronic devices.
Possible Prior Art
Prior art may include similar patents or publications related to nanostructure devices, dielectric fins, isolation structures, and gate structures on substrates.
Unanswered Questions
How does this device compare to existing nanostructure devices on substrates?
This device offers improved isolation and gate structures for nanostructure devices, potentially leading to enhanced performance and integration.
What specific industries could benefit the most from this technology?
Industries such as semiconductor manufacturing, electronics, and sensor development could greatly benefit from the advancements provided by this technology.
Original Abstract Submitted
a device includes a substrate, a first nanostructure device, a second nanostructure device, a dielectric fin, an isolation structure, and first and second dielectric gate structures. the substrate has a first device region, a second device region, and a connecting region. the first nanostructure device is over the first device region. the second nanostructure device is over the second device region. the dielectric fin is over the first device region and the connecting region and is in contact with a gate structure of the first nanostructure device. the isolation structure is over the second device region and is in contact with the second nanostructure device and the dielectric fin. the first dielectric gate structure is over the substrate and between the first device region and the connecting region. the second dielectric gate structure is over the substrate and between the second device region and the connecting region.
