Taiwan semiconductor manufacturing company, ltd. (20240105654). METHOD OF MAKING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE simplified abstract

METHOD OF MAKING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chita Chuang of Kaohsiung City (TW)

Yao-Chun Chuang of Taipei City (TW)

Tsung-Shu Lin of Yonghe City (TW)

Chen-Cheng Kuo of Chu-Pei City (TW)

Chen-Shien Chen of Zhubei City (TW)

METHOD OF MAKING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105654 titled 'METHOD OF MAKING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Simplified Explanation

The method described in the abstract involves creating a semiconductor device by patterning a conductive layer over a substrate to define a conductive pad, depositing a passivation layer and a protective layer over the pad, depositing an under-bump metallization (UBM) layer, depositing a mask layer, forming an opening in the mask layer, and etching the UBM layer to create a conductive pillar.

• Patterning a conductive layer over a substrate to define a conductive pad
• Depositing a passivation layer and a protective layer over the conductive pad
• Depositing an under-bump metallization (UBM) layer with a greater width than the conductive pad
• Depositing a mask layer and forming an opening with the same width as the UBM layer
• Forming a conductive pillar in the opening on the UBM layer
• Etching the UBM layer using the conductive pillar as a mask

Potential Applications

This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and microprocessors.

Problems Solved

This technology solves the problem of efficiently creating conductive pillars on semiconductor devices with precise dimensions and alignment.

Benefits

The benefits of this technology include improved reliability and performance of semiconductor devices, as well as increased manufacturing efficiency and cost-effectiveness.

Potential Commercial Applications

Potential commercial applications of this technology include the production of advanced electronic devices for consumer electronics, telecommunications, automotive, and industrial applications.

Possible Prior Art

One possible prior art for this technology could be the use of similar methods in the fabrication of semiconductor devices, such as flip-chip packaging techniques and interconnect technologies.

Unanswered Questions

How does this technology compare to existing methods in terms of cost-effectiveness and scalability?

The article does not provide information on the cost-effectiveness and scalability of this technology compared to existing methods.

What are the potential limitations or challenges in implementing this technology in mass production?

The article does not address any potential limitations or challenges in implementing this technology in mass production.

Original Abstract Submitted

a method of making a semiconductor device includes patterning a conductive layer over a substrate to define a conductive pad having a first width. the method includes depositing a passivation layer, wherein the passivation layer directly contacts the conductive pad. the method includes depositing a protective layer over the passivation layer, wherein the protective layer directly contacts the conductive pad. the method includes depositing an under-bump metallization (ubm) layer directly contacting the conductive pad, wherein the ubm layer has a second width greater than the first width. the method includes depositing a mask layer over the ubm layer; and forming an opening in the mask layer wherein the opening has the second width. the method includes forming a conductive pillar in the opening on the ubm layer; and etching the ubm layer using the conductive pillar as a mask, wherein the etched ubm layer has the second width.