Taiwan semiconductor manufacturing company, ltd. (20240105521). SEMICONDUCTOR DEVICE STRUCTURE WITH ISOLATION LAYER AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE WITH ISOLATION LAYER AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE WITH ISOLATION LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE WITH ISOLATION LAYER AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Da-Zhi Zhang of New Taipei City (TW)
Chung-Pin Huang of New Taipei City (TW)
Po-Nien Chen of Miaoli County (TW)
Hsiao-Han Liu of Miaoli County (TW)
Jhon-Jhy Liaw of Zhudong Township (TW)
Chih-Yung Lin of Hsinchu County (TW)
SEMICONDUCTOR DEVICE STRUCTURE WITH ISOLATION LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105521 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH ISOLATION LAYER AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a method for forming a semiconductor device structure involving providing a substrate with fins, forming trenches, an isolation layer, gate stacks, and removing a portion of the base.
- Substrate with base, first fin, and second fin
- Formation of first trench between fins in the base
- Creation of isolation layer in the first trench
- Gate stack formation over fins and isolation layer
- Removal of bottom portion of the base
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enhancing isolation between components and optimizing gate stack formation.
Benefits
- Increased device performance - Enhanced isolation between components - Improved gate stack formation
Potential Commercial Applications
Optimizing semiconductor device structures for better performance can have applications in various industries, including electronics, telecommunications, and computing.
Possible Prior Art
Prior methods for forming semiconductor device structures may have involved different techniques for isolation and gate stack formation. However, this specific method appears to offer improvements in efficiency and performance.
Unanswered Questions
How does this method compare to existing techniques in terms of cost-effectiveness?
Answer: The abstract does not provide information on the cost implications of this method compared to existing techniques.
What are the potential challenges or limitations of implementing this method on a larger scale?
Answer: The abstract does not address any potential challenges or limitations that may arise when scaling up the implementation of this method.
Original Abstract Submitted
a method for forming a semiconductor device structure is provided. the method includes providing a substrate having a base, a first fin, and a second fin over the base. the method includes forming a first trench in the base and between the first fin and the second fin. the method includes forming an isolation layer over the base and in the first trench. the first fin and the second fin are partially in the isolation layer. the method includes forming a first gate stack over the first fin and the isolation layer. the method includes forming a second gate stack over the second fin and the isolation layer. the method includes removing a bottom portion of the base. the isolation layer passes through the base after the bottom portion of the base is removed.
