Taiwan semiconductor manufacturing company, ltd. (20240105518). METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract

METHOD FOR FORMING SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chin-Ta Chen of Hsinchu City (TW)

Han-Wei Wu of Tainan City (TW)

Yuan-Hsiang Lung of Hsinchu City (TW)

Hua-Tai Lin of Hsinchu City (TW)

METHOD FOR FORMING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105518 titled 'METHOD FOR FORMING SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor structure with stepped profiles between groups of semiconductor fins on a substrate. The stepped profiles include lower steps, upper steps, and step rises, with the upper steps in the second group wider than those in the first group.

• Semiconductor structure with stepped profiles:

   * First group of semiconductor fins over a first region of the substrate
   * First stepped profile with lower step, upper steps, and step rises
   * Second group of semiconductor fins over a second region of the substrate
   * Second stepped profile with lower step, upper steps, and step rises
   * Second upper steps wider than first upper steps

Potential Applications

The technology could be applied in:

• Semiconductor manufacturing
• Integrated circuit design
• Nanotechnology research

Problems Solved

This technology addresses issues related to:

• Enhancing semiconductor performance
• Improving chip density
• Increasing efficiency of electronic devices

Benefits

The benefits of this technology include:

• Higher processing speeds
• Reduced power consumption
• Smaller device footprint

Potential Commercial Applications

The technology could find commercial applications in:

• Mobile devices
• Computer hardware
• Automotive electronics

Possible Prior Art

One possible prior art for this technology could be:

• Stepped profiles in semiconductor structures
• Previous methods of enhancing semiconductor performance

Unanswered Questions

How does this technology compare to existing semiconductor structures?

This article does not provide a direct comparison with existing semiconductor structures to evaluate the advantages and disadvantages of the new design.

What are the specific manufacturing processes involved in creating these stepped profiles?

The article does not delve into the detailed manufacturing processes required to implement the stepped profiles in semiconductor fins.

Original Abstract Submitted

a first group of semiconductor fins are over a first region of a substrate, the substrate includes a first stepped profile between two of the first group of semiconductor fins, and the first stepped profile comprises a first lower step, two first upper steps, and two first step rises extending from opposite sides of the first lower step to the first upper steps. a second group of semiconductor fins are over a second region of the substrate, the substrate includes a second stepped profile between two of the second group of semiconductor fins, and the second stepped profile comprises a second lower step, two second upper steps, and two second step rises extending from opposite sides of the second lower step to the second upper steps, in which the second upper steps are wider than the first upper steps in the cross-sectional view.