Taiwan semiconductor manufacturing company, ltd. (20240105249). METHOD OF AND APPARATUS FOR REFRESHING MEMORY DEVICES simplified abstract
Contents
- 1 METHOD OF AND APPARATUS FOR REFRESHING MEMORY DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF AND APPARATUS FOR REFRESHING MEMORY DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing memory storage solutions?
- 1.11 What are the potential limitations or drawbacks of implementing this technology?
- 1.12 Original Abstract Submitted
METHOD OF AND APPARATUS FOR REFRESHING MEMORY DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming-Yen Chuang of Hsinchu (TW)
Katherine H. Chiang of Hsinchu (TW)
METHOD OF AND APPARATUS FOR REFRESHING MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105249 titled 'METHOD OF AND APPARATUS FOR REFRESHING MEMORY DEVICES
Simplified Explanation
The patent application describes an integrated circuit with memory cells that can store and invert bit values.
- Array of word lines
- Array of memory cells connected to data lines
- Read-write driver with catch circuit
- Stores first bit value related to stored bit value
- Stores second bit value which is a bit inversion of the stored bit value
Potential Applications
This technology could be applied in various memory storage devices, such as solid-state drives, computer memory modules, and embedded systems.
Problems Solved
This technology solves the problem of efficiently storing and manipulating data in memory cells, allowing for faster read and write operations.
Benefits
The benefits of this technology include improved data storage efficiency, faster data access speeds, and increased reliability in memory operations.
Potential Commercial Applications
This technology could be commercially applied in the development of high-speed memory devices for consumer electronics, data centers, and other computing applications.
Possible Prior Art
One possible prior art for this technology could be similar patents related to memory cell structures and read-write operations in integrated circuits.
Unanswered Questions
How does this technology compare to existing memory storage solutions?
This article does not provide a direct comparison to existing memory storage solutions in terms of performance, efficiency, or cost-effectiveness.
What are the potential limitations or drawbacks of implementing this technology?
This article does not address any potential limitations or drawbacks of implementing this technology, such as compatibility issues, scalability challenges, or manufacturing costs.
Original Abstract Submitted
an integrated circuit includes an array of word lines, and an array of memory cells configured to receive selection signals from the array of word lines. each memory cell in the array of memory cells is connected to one or more data lines in a set of data lines. the integrated circuit also includes a read-write driver which is connected to the set of data lines and is configured to receive a flip-refresh control signal. the read-write driver has a catch circuit configured to store a first bit value related to a stored bit value in a selected memory cell. the read-write driver is configured to store into the selected memory cell a second bit value which is a bit inversion of the stored bit value.
