Taiwan semiconductor manufacturing co., ltd. (20250089264). 3D FERROELECTRIC MEMORY
Contents
3D FERROELECTRIC MEMORY
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sheng-Chen Wang of Hsinchu City (TW)
Feng-Cheng Yang of Zhudong Township (TW)
Sai-Hooi Yeong of Zhubei City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Han-Jong Chia of Hsinchu City (TW)
3D FERROELECTRIC MEMORY
This abstract first appeared for US patent application 20250089264 titled '3D FERROELECTRIC MEMORY
Original Abstract Submitted
a 3d memory array has data storage structures provided at least in part by one or more vertical films that do not extend between vertically adjacent memory cells. the 3d memory array includes conductive strips and dielectric strips, alternately stacked over a substrate. the conductive strips may be laterally indented from the dielectric strips to form recesses. a data storage film may be disposed within these recesses. any portion of the data storage film deposited outside the recesses may have been effectively removed, whereby the data storage film is essentially discontinuous from tier to tier within the 3d memory array. the data storage film within each tier may have upper and lower boundaries that are the same as those of a corresponding conductive strip. the data storage film may also be made discontinuous between horizontally adjacent memory cells.
