Taiwan semiconductor manufacturing co., ltd. (20240421202). FEEDTHROUGH VIA BETWEEN ACTIVE REGIONS
Contents
FEEDTHROUGH VIA BETWEEN ACTIVE REGIONS
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chen-Ming Lee of Taoyuan County (TW)
Ming-Cheng Syu of Hsinchu City (TW)
FEEDTHROUGH VIA BETWEEN ACTIVE REGIONS
This abstract first appeared for US patent application 20240421202 titled 'FEEDTHROUGH VIA BETWEEN ACTIVE REGIONS
Original Abstract Submitted
one aspect of the present disclosure pertains to a semiconductor structure. the semiconductor structure includes first and second active regions extending lengthwise along a first direction and metal gate structures extending lengthwise along a second direction over channels of the first and second active regions. the semiconductor structure includes an insulating structure cutting through the metal gate structures. the insulating structure is disposed between the first and the second active regions along the second direction. the semiconductor structure includes source/drain (s/d) contacts over the insulating structure and over s/d features of the first and second active regions. the s/d contacts extend lengthwise along the second direction. and the semiconductor structure includes a feedthrough via contacting a bottom surface of the s/d contacts and penetrating through a portion of the insulating structure. the insulating structure surrounds the feedthrough via and isolates the feedthrough via from the metal gate structures.
