Taiwan semiconductor manufacturing co., ltd. (20240313770). FUSE STRUCTURE simplified abstract
Contents
FUSE STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Bao-Ru Young of Hsinchu County (TW)
Tung-Heng Hsieh of Hsinchu County (TW)
FUSE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313770 titled 'FUSE STRUCTURE
The abstract describes a fuse structure that includes first and second transistors with source, drain, and gate terminals, as well as source/drain contacts, an insulator, and a source/drain contact via. A programming potential applied across the source/drain contact via and the drain terminal of the second transistor causes the insulator to break down.
- First and second transistors with source, drain, and gate terminals
- Source/drain contacts on the first and second transistors
- Insulator between the source/drain contacts
- Source/drain contact via on the first source/drain contact
- Programming potential causing insulator breakdown
Potential Applications: - Integrated circuits - Semiconductor devices - Electronics manufacturing
Problems Solved: - Efficient programming of fuse structures - Reliable breakdown of insulator
Benefits: - Enhanced performance of electronic devices - Improved reliability of fuse structures
Commercial Applications: Title: "Advanced Fuse Structures for Enhanced Electronics Performance" This technology can be used in the production of various electronic devices, such as smartphones, computers, and automotive electronics, to improve their performance and reliability in a cost-effective manner.
Questions about Fuse Structures: 1. How does the programming potential affect the breakdown of the insulator? The programming potential applied across the source/drain contact via and the drain terminal of the second transistor causes the insulator to break down, enabling the programming of the fuse structure.
2. What are the key advantages of using source/drain contacts and an insulator in a fuse structure? The use of source/drain contacts and an insulator allows for precise programming of the fuse structure, ensuring reliable operation and improved performance of electronic devices.
Original Abstract Submitted
a fuse structure includes first and second transistors where each of the first and the second transistors has a source terminal, a drain terminal, and a gate terminal; a first source/drain contact disposed on the source terminal of the first transistor; a second source/drain contact disposed on the drain terminal of the second transistor; an insulator disposed laterally between the first and the second source/drain contacts; a source/drain contact via disposed on the first source/drain contact; and a program line connected to the source/drain contact via, wherein a width of the insulator is configured such that a programming potential applied across the source/drain contact via and the drain terminal of the second transistor causes the insulator to break down.
