Taiwan semiconductor manufacturing co., ltd. (20240312995). STACKING CMOS STRUCTURE simplified abstract
Contents
STACKING CMOS STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chia-En Huang of Hsinchu County (TW)
Ching-Wei Tsai of Hsinchu City (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
STACKING CMOS STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312995 titled 'STACKING CMOS STRUCTURE
The semiconductor structure described in the patent application includes a power rail, a first source/drain feature over the power rail, a via connecting the power rail to the first source/drain feature, an isolation feature over the first source/drain feature, and a second source/drain feature over the isolation feature, with the first and second source/drain features being of opposite conductivity types.
- Power rail, first source/drain feature, and isolation feature are key components of the semiconductor structure.
- Via connects the power rail to the first source/drain feature, ensuring proper functionality.
- Second source/drain feature is placed over the isolation feature, enhancing the structure's performance.
- Opposite conductivity types of the first and second source/drain features provide balance and efficiency.
- Overall, the structure aims to optimize the flow of power and signals within the semiconductor device.
Potential Applications: - This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits and microprocessors. - It can be utilized in the development of advanced electronic devices for consumer electronics, automotive systems, and industrial applications.
Problems Solved: - Enhances the efficiency and performance of semiconductor devices by optimizing power distribution. - Provides a reliable and stable structure for the flow of signals within the device.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced power distribution and signal flow efficiency. - Increased reliability and stability of electronic systems.
Commercial Applications: Title: "Advanced Semiconductor Structures for Enhanced Device Performance" This technology can be commercially used in the production of high-performance electronic devices, leading to improved consumer products and increased market competitiveness in the semiconductor industry.
Questions about Semiconductor Structures: 1. How does the placement of the second source/drain feature over the isolation feature impact the overall performance of the semiconductor structure? 2. What are the potential implications of using opposite conductivity types for the first and second source/drain features in semiconductor devices?
Original Abstract Submitted
a semiconductor structure includes a power rail, a first source/drain feature disposed over the power rail, a via connecting the power rail to the first source/drain feature; an isolation feature disposed over the first source/drain feature, and a second source/drain feature disposed over the isolation feature, where the first and the second source/drain features are of opposite conductivity types.
