Taiwan semiconductor manufacturing co., ltd. (20240312979). SEMICONDUCTOR DIODE STRUCTURE simplified abstract
Contents
SEMICONDUCTOR DIODE STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Ji Chen of Taipei City (TW)
SEMICONDUCTOR DIODE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312979 titled 'SEMICONDUCTOR DIODE STRUCTURE
The abstract of the patent application describes a diode structure with a silicon remaining layer, a first p-type doping region, and a first n-type doping region on the silicon remaining layer. A first channel region is located between the p-type and n-type doping regions along a first direction.
- The diode structure includes a silicon remaining layer, first p-type doping region, and first n-type doping region.
- A first channel region is positioned between the p-type and n-type doping regions.
- The components are aligned along a first direction.
Potential Applications: - Semiconductor devices - Electronics industry - Solar panels
Problems Solved: - Efficient energy conversion - Improved semiconductor performance
Benefits: - Enhanced diode functionality - Increased efficiency in electronic devices
Commercial Applications: Title: Advanced Diode Structures for Semiconductor Devices This technology can be used in various electronic devices, solar panels, and other semiconductor applications, leading to improved performance and energy efficiency in the market.
Prior Art: Further research can be conducted on diode structures in semiconductor devices to explore similar innovations in the field.
Frequently Updated Research: Ongoing research on semiconductor materials and device structures may provide new insights into optimizing diode performance.
Questions about Diode Structures: 1. How do diode structures impact the efficiency of semiconductor devices? 2. What are the potential advancements in diode technology for future applications?
Original Abstract Submitted
a diode structure includes a silicon remaining layer, a first p-type doping region disposed on the silicon remaining layer and a first n-type doping region disposed on the silicon remaining layer. a first channel region is disposed on the silicon remaining layer and between the p-type doping region and the n-type doping region, wherein the first channel region, the first p-type doping region, and the first n-type doping region are disposed along a first direction.
