Taiwan semiconductor manufacturing co., ltd. (20240249981). INTEGRATED CIRCUIT STRUCTURE simplified abstract
Contents
INTEGRATED CIRCUIT STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuei-Ming Chang of New Taipei (TW)
INTEGRATED CIRCUIT STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240249981 titled 'INTEGRATED CIRCUIT STRUCTURE
The patent application describes a device with two transistors and a dielectric structure between them.
- The first transistor is positioned over a substrate with a first gate structure.
- The second transistor is also over the substrate with a second gate structure.
- The dielectric structure is located between the first and second gate structures.
- The width of the dielectric structure increases from the bottom to a higher position.
- The width of the first gate structure is smaller than the width of the dielectric structure at the higher position.
Potential Applications: - This technology could be used in the development of advanced electronic devices. - It may find applications in the semiconductor industry for improving transistor performance.
Problems Solved: - Enhances the efficiency and functionality of transistors. - Provides a solution for optimizing the space between gate structures.
Benefits: - Improved performance of electronic devices. - Enhanced integration of components in semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Devices with Optimized Gate Structures This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Further research can be conducted in the field of semiconductor device fabrication to explore similar innovations in gate structure optimization.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and device fabrication techniques to understand the evolving landscape of gate structure optimization.
Questions about the Technology: 1. How does the width variation of the dielectric structure impact the performance of the transistors?
- The width variation affects the capacitance and electrical properties of the transistors, influencing their overall performance.
2. What are the potential challenges in implementing this technology on a larger scale in semiconductor manufacturing?
- Scaling up the production process may require addressing issues related to uniformity and precision in fabricating the optimized gate structures.
Original Abstract Submitted
a device includes a first transistor, a second transistor, and a dielectric structure. the first transistor is over a substrate and has a first gate structure. the second transistor is over the substrate and has a second gate structure. the dielectric structure is between the first gate structure and the second gate structure. the dielectric structure has a width increasing from a bottom position of the dielectric structure to a first position higher than the bottom position of the dielectric structure. a width of the first gate structure is less than the width of the dielectric structure at the first position.
