Taiwan semiconductor manufacturing co., ltd. (20240249976). SEMICONDUCTOR DEVICE STRUCTURES simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hsin-Che Chiang of Taipei City (TW)
Jeng-Ya David Yeh of New Taipei City (TW)
Chung-Sheng Liang of Changhua County (TW)
Ju-Li Huang of Nantou County (TW)
SEMICONDUCTOR DEVICE STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240249976 titled 'SEMICONDUCTOR DEVICE STRUCTURES
The method described in the abstract involves a process for semiconductor manufacturing that includes forming silicon nitride features on the sidewall surfaces of a contact hole, creating air gaps, and forming a hard mask layer.
- Formation of first and second silicon nitride features on sidewall surfaces of a contact hole
- Creation of air gaps by removing the silicon nitride features
- Formation of a hard mask layer in the contact hole
- Electrically coupling a contact plug to a source/drain feature
- Removing a top portion of the contact plug to create a recess in the contact hole
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Nanotechnology research
Problems Solved: - Enhancing electrical coupling efficiency - Improving device performance - Reducing signal interference
Benefits: - Increased device reliability - Enhanced signal transmission - Improved overall device functionality
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Enhanced Device Performance This technology can be applied in the production of high-performance electronic devices, leading to improved efficiency and reliability in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Readers can explore prior research in the field of semiconductor manufacturing processes, specifically focusing on methods to enhance device performance through improved contact hole structures and materials.
Frequently Updated Research: Researchers are continually exploring innovative techniques to further optimize semiconductor manufacturing processes for increased device performance and reliability.
Questions about Semiconductor Manufacturing: 1. How does the formation of air gaps in the contact hole impact device performance?
- The creation of air gaps helps reduce signal interference and improves the overall efficiency of the device.
2. What are the potential challenges associated with implementing this advanced semiconductor manufacturing process?
- Some challenges may include precise control of the etching process and ensuring the reliability of the contact plug structure.
Original Abstract Submitted
in one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (s/d) feature. the method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the s/d feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.
