Taiwan semiconductor manufacturing co., ltd. (20240248406). METHOD OF MANUFACTURING INTEGRATED CIRCUIT simplified abstract
Contents
METHOD OF MANUFACTURING INTEGRATED CIRCUIT
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chansyun David Yang of Hsinchu (TW)
Keh-Jeng Chang of Hsinchu (TW)
Chan-Lon Yang of Taipei City (TW)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240248406 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT
The method described in the patent application involves irradiating multiple target droplets with laser light simultaneously in an extreme ultraviolet (EUV) radiation source apparatus to generate EUV radiation, which is then collected and directed by an imaging mirror.
- Simultaneously irradiating two or more target droplets with laser light
- Producing EUV radiation in an EUV radiation source apparatus
- Collecting and directing the EUV radiation produced from the target droplets using an imaging mirror
Potential Applications: - Semiconductor lithography - Microscopy - Spectroscopy
Problems Solved: - Enhancing the efficiency of EUV radiation generation - Improving the quality of EUV radiation produced
Benefits: - Increased precision in EUV radiation production - Higher throughput in semiconductor manufacturing processes
Commercial Applications: Title: Enhanced EUV Radiation Source for Semiconductor Lithography This technology could revolutionize the semiconductor industry by improving the efficiency and quality of EUV radiation sources, leading to faster and more precise semiconductor manufacturing processes.
Questions about Enhanced EUV Radiation Source for Semiconductor Lithography: 1. How does this technology compare to existing EUV radiation sources in terms of efficiency and quality? 2. What are the potential cost savings for semiconductor manufacturers implementing this technology?
Frequently Updated Research: Researchers are continually exploring new methods to enhance the generation of EUV radiation for various applications, including semiconductor lithography. Stay updated on the latest advancements in EUV technology to understand the full potential of this innovation.
Original Abstract Submitted
a method for generating an extreme ultraviolet (euv) radiation includes simultaneously irradiating two or more target droplets with laser light in an euv radiation source apparatus to produce euv radiation and collecting and directing the euv radiation produced from the two or more target droplet by an imaging mirror.
