Taiwan semiconductor manufacturing co., ltd. (20240224822). RRAM STRUCTURE simplified abstract
Contents
RRAM STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hai-Dang Trinh of Hsinchu (TW)
Chii-Ming Wu of Taipei City (TW)
Hsing-Lien Lin of Hsin-Chu (TW)
Fa-Shen Jiang of Taoyuan City (TW)
RRAM STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224822 titled 'RRAM STRUCTURE
The present disclosure pertains to an integrated chip with a bottom electrode structure containing a noble metal, a diffusion barrier layer, a data storage structure, and a top electrode structure.
- Bottom electrode structure with noble metal
- Diffusion barrier layer to prevent diffusion of noble metal atoms
- Data storage structure over the diffusion barrier layer
- Top electrode structure over the data storage structure
- Integrated chip design for improved performance and reliability
Potential Applications: - Memory storage devices - Semiconductor industry - Electronics manufacturing
Problems Solved: - Preventing diffusion of noble metal atoms - Enhancing performance and reliability of integrated chips
Benefits: - Improved data storage capabilities - Enhanced chip longevity - Increased efficiency in electronic devices
Commercial Applications: Title: Advanced Integrated Chip Technology for Enhanced Data Storage This technology can be utilized in the production of memory storage devices, semiconductor components, and various electronic devices, leading to improved performance and reliability in the market.
Questions about Integrated Chip Technology: 1. How does the diffusion barrier layer contribute to the overall functionality of the integrated chip? The diffusion barrier layer plays a crucial role in preventing the diffusion of noble metal atoms from the bottom electrode structure to the data storage structure, ensuring the integrity and longevity of the chip.
2. What are the key advantages of using a noble metal in the bottom electrode structure of the integrated chip? Noble metals offer excellent conductivity and stability, making them ideal for use in electronic components where reliability and performance are essential.
Original Abstract Submitted
in some embodiments, the present disclosure relates to an integrated chip. the integrated chip includes a bottom electrode structure disposed over a lower interconnect within a lower inter-level dielectric (ild) layer over a substrate. the bottom electrode structure has an upper surface including a noble metal. a diffusion barrier layer is over the bottom electrode structure, a data storage structure is over the diffusion barrier layer, and a top electrode structure is over the data storage structure. the diffusion barrier layer is configured to mitigate a diffusion of noble metal atoms from the bottom electrode structure to the data storage structure.
