Taiwan semiconductor manufacturing co., ltd. (20240224489). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Jhon-Jhy Liaw of Zhudong Township (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240224489 titled 'SEMICONDUCTOR DEVICE

Abstract: Semiconductor devices with dual-port memory cells are provided. A first inverter includes a first pull-up transistor, and first and second pull-down transistors connected in parallel. A second inverter includes a second pull-up transistor, and third and fourth pull-down transistors connected in parallel. First and second pass-gate transistors are coupled to the first inverter to form a first port. Third and fourth pass-gate transistors are coupled to the second inverter to form a second port.

• Simplified Explanation:

The patent application describes semiconductor devices with dual-port memory cells. These devices consist of inverters with pull-up and pull-down transistors connected in parallel, as well as pass-gate transistors that form two separate ports.

• Key Features and Innovation:

- Dual-port memory cells - Inverters with pull-up and pull-down transistors - Pass-gate transistors for forming ports - Shared continuous active regions for certain transistors

• Potential Applications:

- Memory storage systems - Embedded systems - Integrated circuits

• Problems Solved:

- Efficient memory cell access - Enhanced data storage capabilities - Improved circuit design for memory applications

• Benefits:

- Faster data retrieval - Increased data processing speed - Higher memory density

• Commercial Applications:

Title: Dual-Port Memory Cell Semiconductor Devices for Enhanced Data Storage This technology can be utilized in various commercial applications such as: - Consumer electronics - Data centers - Automotive electronics

• Prior Art:

Readers can explore prior art related to dual-port memory cells, semiconductor devices, and memory cell access technologies in the field of integrated circuits and memory storage systems.

• Frequently Updated Research:

Researchers are constantly exploring advancements in semiconductor devices, memory cell technologies, and circuit design for improved data storage and processing capabilities.

Questions about Dual-Port Memory Cell Semiconductor Devices: 1. How do dual-port memory cells differ from single-port memory cells? Dual-port memory cells allow for simultaneous read and write operations on two separate ports, while single-port memory cells only support one access at a time.

2. What are the advantages of using pass-gate transistors in memory cell design? Pass-gate transistors help in isolating and controlling the access to memory cells, enabling efficient data retrieval and storage operations.

Original Abstract Submitted

semiconductor devices with dual-port memory cells are provided. first inverter includes first pull-up transistor, and first and second pull-down transistors connected in parallel. second inverter includes second pull-up transistor, and third and fourth pull-down transistors connected in parallel. first and second pass-gate transistors are coupled to the first inverter to form a first port. third and fourth pass-gate transistors are coupled to the second inverter to form a second port. first and second pass-gate transistors and the first and third pull-down transistors share first continuous active region. the third and fourth pass-gate transistors and the second and fourth pull-down transistors share a second continuous active region. the first and second pull-up transistors and first and second isolation transistors share a third continuous active region. gates of the first and second isolation transistors are electrically connected to vdd line. sources of the first and second isolation transistors are floating.