Taiwan semiconductor manufacturing co., ltd. (20240222433). SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Jia-Heng Wang of Kaohsiung City (TW)
Chao-Hsun Wang of Taoyuan City (TW)
Fu-Kai Yang of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222433 titled 'SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation: The patent application describes semiconductor structures with nanostructures, gate structures, gate spacers, source/drain structures, contacts, and conductive structures.
- Nanostructures are spaced apart in one direction.
- Gate structure is formed over and around the nanostructures.
- Gate spacer covers the gate structure's sidewall.
- Source/drain structure is attached to the nanostructures in another direction.
- Contact is spaced apart from the gate structure by the gate spacer.
- First conductive structure lands over the gate structure.
- Second conductive structure is formed over the gate spacer.
- A portion of the second conductive structure is sandwiched between the first conductive structure and the contact.
Potential Applications: 1. Advanced semiconductor devices. 2. High-performance electronics. 3. Nanotechnology research.
Problems Solved: 1. Enhancing semiconductor device performance. 2. Improving integration of nanostructures. 3. Increasing conductivity efficiency.
Benefits: 1. Improved device functionality. 2. Enhanced electrical performance. 3. Increased miniaturization capabilities.
Commercial Applications: Advanced Semiconductor Structures for High-Performance Electronics
Prior Art: Researchers can explore prior patents related to semiconductor nanostructures, gate structures, and conductive materials.
Frequently Updated Research: Ongoing studies focus on optimizing the design and materials used in semiconductor structures for better performance and efficiency.
Questions about Semiconductor Structures: 1. How do these semiconductor structures improve device performance? 2. What are the potential challenges in manufacturing these complex structures?
Original Abstract Submitted
semiconductor structures and methods for manufacturing the same are provided. the semiconductor structure includes nanostructures spaced apart from each other in a first direction and a gate structure formed over and around the nanostructures. the semiconductor structure further includes a gate spacer covering a sidewall of the gate structure and a source/drain structure attached to the nanostructures in a second direction. the semiconductor structure further includes a contact spaced apart from the gate structure by the gate spacer in the second direction and a first conductive structure landing over the gate structure. the semiconductor structure further includes a second conductive structure formed over the gate spacer. in addition, a portion of the second conductive structure is sandwiched between the first conductive structure and the contact.
