Taiwan semiconductor manufacturing co., ltd. (20240222339). Integrated Circuit Package With Improved Heat Dissipation Efficiency and Methods of Forming the Same simplified abstract
Integrated Circuit Package With Improved Heat Dissipation Efficiency and Methods of Forming the Same
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Chiang Ting of Hsinchu (TW)
Sung-Feng Yeh of Taipei City (TW)
Integrated Circuit Package With Improved Heat Dissipation Efficiency and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222339 titled 'Integrated Circuit Package With Improved Heat Dissipation Efficiency and Methods of Forming the Same
Simplified Explanation:
The patent application describes a device with multiple integrated circuit dies arranged in a specific configuration.
Key Features and Innovation:
- Device includes a first integrated circuit die with a conductive via penetrating through the substrate.
- Second integrated circuit die is disposed laterally adjacent to the first die.
- First gap-filling layer made of materials like silicon, silicon carbide, or silicon nitride is placed between the first and second dies.
- Third integrated circuit die is attached to the first die in a face-to-back manner.
Potential Applications: This technology can be used in various electronic devices requiring compact and efficient integrated circuits.
Problems Solved: This technology addresses the need for compact and reliable integration of multiple circuit dies in electronic devices.
Benefits:
- Improved efficiency and performance of electronic devices.
- Enhanced reliability and compactness of integrated circuits.
Commercial Applications: Potential commercial applications include smartphones, tablets, laptops, and other consumer electronics requiring compact and efficient integrated circuits.
Questions about the Technology: 1. How does the specific configuration of the integrated circuit dies improve the overall performance of electronic devices? 2. What are the advantages of using materials like silicon, silicon carbide, or silicon nitride in the gap-filling layer of the device?
Original Abstract Submitted
in an embodiment, a device includes a first integrated circuit die, wherein the first integrated circuit die includes a substrate formed of a semiconductor material and a conductive via penetrating through the substrate; a second integrated circuit die disposed laterally adjacent to the first integrated circuit die; a first gap-filling layer disposed between the first integrated circuit die and the second integrated circuit die, wherein the first gap-filling layer is formed of a material selected from silicon, silicon carbide, silicon oxynitride, silicon nitride, the semiconductor material of the substrate, or a combination thereof; and a third integrated circuit die attached to the first integrated circuit die in a face-to-back manner.
