Taiwan semiconductor manufacturing co., ltd. (20240222269). SEMICONDUCTOR DEVICE INCLUDING RECESSED INTERCONNECT STRUCTURE simplified abstract

SEMICONDUCTOR DEVICE INCLUDING RECESSED INTERCONNECT STRUCTURE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Guo-Huei Wu of Tainan City (TW)

Hui-Zhong Zhuang of Kaohsiung City (TW)

Chih-Liang Chen of Hsinchu City (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Shang-Wen Chang of Jhubei City (TW)

Yi-Hsun Chiu of Zhubei City (TW)

SEMICONDUCTOR DEVICE INCLUDING RECESSED INTERCONNECT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222269 titled 'SEMICONDUCTOR DEVICE INCLUDING RECESSED INTERCONNECT STRUCTURE

The semiconductor device described in the abstract includes a complex structure involving multiple interconnects and gate structures.

• The device features a first gate structure extending in one direction and a first interconnect structure above it, extending perpendicular to the gate structure.
• The first interconnect structure is divided into two portions by a dielectric structure, with a second interconnect structure between the gate structure and the first interconnect structure.
• The second interconnect structure includes a recessed portion aligned with the gate structure and the dielectric structure vertically.

Potential Applications: - This technology could be used in advanced semiconductor devices for high-performance computing applications. - It may find applications in the development of more efficient and compact electronic devices.

Problems Solved: - The technology addresses the need for improved connectivity and signal transmission in semiconductor devices. - It helps in enhancing the overall performance and reliability of electronic components.

Benefits: - Improved electrical coupling between different components in semiconductor devices. - Enhanced efficiency and functionality of electronic devices.

Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Computing This technology could be utilized in the production of cutting-edge electronic devices for various industries, including telecommunications, aerospace, and consumer electronics.

Questions about the technology: 1. How does the alignment of the recessed portion in the second interconnect structure contribute to the overall performance of the semiconductor device? 2. What are the potential challenges in manufacturing semiconductor devices with such complex interconnect structures?

Original Abstract Submitted

a semiconductor device includes a first gate structure extending along a first lateral direction. the semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. the first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. the semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. the second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.