Taiwan semiconductor manufacturing co., ltd. (20240222264). DECOUPLING CAPACITORS WITH BACK SIDE POWER RAILS simplified abstract
Contents
DECOUPLING CAPACITORS WITH BACK SIDE POWER RAILS
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kam-Tou Sio of Zhubei City (TW)
Jiann-Tyng Tzeng of Hsinchu (TW)
DECOUPLING CAPACITORS WITH BACK SIDE POWER RAILS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222264 titled 'DECOUPLING CAPACITORS WITH BACK SIDE POWER RAILS
The semiconductor device described in the abstract includes a substrate with an active region, gate structures, and interconnecting structures configured as a decoupling capacitor.
- The device has an active region on one side, extending along a lateral direction.
- Gate structures are arranged on the same side, wrapping a portion of the active region.
- Interconnecting structures are electrically coupled to the gate structures and active region.
- A decoupling capacitor is formed by the active region, gate structures, and interconnecting structures.
Potential Applications: - Integrated circuits - Power electronics - Communication systems
Problems Solved: - Improved performance of semiconductor devices - Enhanced signal processing capabilities - Increased efficiency in electronic systems
Benefits: - Higher capacitance values - Reduced noise interference - Enhanced signal integrity
Commercial Applications: Title: "Advanced Semiconductor Devices for Enhanced Signal Processing" This technology can be used in various industries such as telecommunications, consumer electronics, and automotive for improved performance and efficiency.
Questions about the technology: 1. How does the decoupling capacitor configuration improve the performance of the semiconductor device? 2. What are the key advantages of using this technology in power electronics applications?
Frequently Updated Research: Researchers are constantly exploring new materials and designs to further enhance the capacitance and efficiency of semiconductor devices. Stay updated on the latest advancements in this field for potential future applications.
Original Abstract Submitted
a semiconductor device includes a substrate having a first side and a second side; an active region arranged on the first side, and extending along a first lateral direction; a first gate structure arranged on the first side, extending along a second lateral direction perpendicular to the first lateral direction, disposed over the active region, and wrapping a first portion of the active region; a first interconnecting structure arranged on the first side, electrically coupled to the first gate structure, and disposed over the first gate structure; and a second interconnecting structure arranged on the second side, and electrically coupled to one or more portions of the active region. the active region, the first gate structure, the first interconnecting structure, and the second interconnecting structure are collectively configured as a decoupling capacitor.
