Taiwan semiconductor manufacturing co., ltd. (20240222197). METHOD FOR FORMING A CRYSTALLINE PROTECTIVE POLYSILICON LAYER simplified abstract

METHOD FOR FORMING A CRYSTALLINE PROTECTIVE POLYSILICON LAYER

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Cheng-Hung Wang of Hsin-Chu (TW)

Tsung-Lin Lee of Hsin-Chu (TW)

Wen-Chih Chiang of Hsin-Chu (TW)

Kuan-Jung Chen of Hsin-Chu (TW)

METHOD FOR FORMING A CRYSTALLINE PROTECTIVE POLYSILICON LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222197 titled 'METHOD FOR FORMING A CRYSTALLINE PROTECTIVE POLYSILICON LAYER

Simplified Explanation: The patent application describes a method for forming a protective polysilicon layer that effectively shields devices underneath without creating defective voids during subsequent processes.

Key Features and Innovation:

• Deposit a protective coating on a first polysilicon layer.
• Form an epitaxial layer on the protective coating.
• Deposit a second polysilicon layer over the epitaxial layer.
• The protective coating includes a third polysilicon layer deposited at a specific temperature range.
• The third polysilicon layer protects the first polysilicon layer during etching of the second polysilicon layer.

Potential Applications: This technology can be applied in semiconductor device manufacturing processes to enhance device protection and reliability.

Problems Solved: The method addresses the issue of defective voids forming during subsequent processes, ensuring effective protection of devices underneath.

Benefits: The method provides a reliable and efficient way to protect semiconductor devices, improving their overall performance and longevity.

Commercial Applications: This technology has potential commercial applications in the semiconductor industry, specifically in the production of advanced electronic devices.

Questions about Crystalline Protective Polysilicon Layer: 1. How does the method prevent the formation of defective voids during subsequent processes? 2. What are the specific temperature ranges for depositing the protective polysilicon layer?

Frequently Updated Research: Ongoing research in semiconductor materials and manufacturing processes may lead to further advancements in protective coating technologies like the one described in this patent application.

Original Abstract Submitted

disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. in one embodiment, a method for forming a semiconductor device, includes: depositing a protective coating on a first polysilicon layer; forming an epitaxial layer on the protective coating; and depositing a second polysilicon layer over the epitaxial layer, wherein the protective coating comprises a third polysilicon layer, wherein the third polysilicon layer is deposited at a first temperature in a range of 600-700 degree celsius, and wherein the third polysilicon layer in the protect coating is configured to protect the first polysilicon layer when the second polysilicon layer is etched.