Taiwan semiconductor manufacturing co., ltd. (20240222188). FINFET CIRCUIT DEVICES WITH WELL ISOLATION simplified abstract

FINFET CIRCUIT DEVICES WITH WELL ISOLATION

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chih-Chuan Yang of Hsinchu (TW)

Chang-Ta Yang of Hsinchu City (TW)

FINFET CIRCUIT DEVICES WITH WELL ISOLATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222188 titled 'FINFET CIRCUIT DEVICES WITH WELL ISOLATION

The patent application describes a method for forming a structure with fins above a substrate, where the substrate includes different well regions with different dopant types.

• The method involves using a patterned etch mask to create an opening directly above a fin, etching the structure to remove the fin and create a recess in the substrate spanning between the well regions, and filling the recess with a dielectric material.
• This process allows for the precise formation of features in the structure, such as the fins and the recess, which can be crucial for the performance of semiconductor devices.
• By selectively etching the structure and filling the recess with dielectric material, the method enables the creation of advanced semiconductor devices with improved electrical characteristics and performance.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits. - It can also be used in the production of high-performance electronic components for various industries, including telecommunications and computing.

Problems Solved: - The method addresses the challenge of forming precise features in semiconductor structures with different dopant types in the substrate. - It helps in improving the performance and reliability of semiconductor devices by enabling the creation of well-defined structures.

Benefits: - Enhanced control over the formation of features in semiconductor structures. - Improved electrical characteristics and performance of semiconductor devices. - Increased efficiency and reliability in the manufacturing process of advanced electronic components.

Commercial Applications: - The technology can be utilized by semiconductor manufacturers to produce cutting-edge electronic devices with superior performance. - It has the potential to drive innovation in the semiconductor industry and lead to the development of next-generation electronic products.

Questions about the technology: 1. How does the method of forming a recess between different well regions in the substrate contribute to the performance of semiconductor devices? 2. What are the key advantages of using a patterned etch mask in the fabrication process of semiconductor structures?

Original Abstract Submitted

a method includes receiving a structure that includes a substrate including a first well region having a first dopant type and a second well region having a second dopant type that is opposite to the first dopant type; and fins extending above the substrate. the method further includes forming a patterned etch mask on the structure, wherein the patterned etch mask provides an opening that is directly above a first fin of the fins, wherein the first fin is directly above the first well region. the method further includes etching the structure through the patterned etch mask, wherein the etching removes the first fin and forms a recess in the substrate that spans from the first well region into the second well region; and forming a dielectric material between remaining portions of the fins and within the recess.