Taiwan semiconductor manufacturing co., ltd. (20240222134). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Yi-Chen Lo of Zhubei City (TW)

Yi-Shan Chen of Tainan City (TW)

Chih-Kai Yang of Taipei City (TW)

Pinyen Lin of Rochester NY (US)

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222134 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

• • Simplified Explanation:**

This patent application describes a method of forming a pattern on a semiconductor substrate by using a shifting film in the mask layer to create a shifted opening for patterning the target layer.

• • Key Features and Innovation:**
• Formation of a shifting film in the inner sidewall of the mask opening.
• One-directional etching operation to remove part of the shifting film and mask layer to create a shifted opening.
• Patterning of the target layer using the mask layer with the shifted opening as an etching mask.
• Lateral shifting of the opening location from its original position.

• • Potential Applications:**

This technology can be applied in semiconductor manufacturing processes for creating intricate patterns on substrates.

• • Problems Solved:**
• Enables precise patterning of semiconductor substrates.
• Facilitates the creation of complex patterns with high accuracy.

• • Benefits:**
• Improved precision in pattern formation.
• Enhanced control over the patterning process.
• Increased efficiency in semiconductor manufacturing.

• • Commercial Applications:**

This technology could be utilized in the production of advanced electronic devices, integrated circuits, and other semiconductor components.

• • Questions about the Technology:**

1. How does the shifting film contribute to the patterning process? 2. What are the advantages of laterally shifting the opening location in the mask layer?

Original Abstract Submitted

in a method of forming a pattern over a semiconductor substrate, a target layer to be patterned is formed over a substrate, a mask pattern including an opening is formed in a mask layer, a shifting film is formed in an inner sidewall of the opening, a one-directional etching operation is performed to remove a part of the shifting film and a part of the mask layer to form a shifted opening, and the target layer is patterned by using the mask layer with the shifted opening as an etching mask. a location of the shifted opening is laterally shifted from an original location of the opening.