Taiwan semiconductor manufacturing co., ltd. (20240222071). Grid Structures Of Ion Beam Etching (IBE) Systems simplified abstract

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Grid Structures Of Ion Beam Etching (IBE) Systems

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chansyun David Yang of Shinchu (TW)

Keh-Jeng Chang of Hsinchu (TW)

Chan-Lon Yang of Taipei City (TW)

Perng-Fei Yuh of Walnut Creek CA (US)

Grid Structures Of Ion Beam Etching (IBE) Systems - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222071 titled 'Grid Structures Of Ion Beam Etching (IBE) Systems

The present disclosure pertains to an ion beam etching (IBE) system with various components such as a plasma chamber, screen grid, extraction grid, accelerator grid, and decelerator grid. The system is designed to extract ions from the plasma to form an ion beam, control the ion current density, and determine the ion beam energy.

  • The screen grid extracts ions from the plasma to create an ion beam through a hole.
  • The extraction grid controls the ion current density based on the voltage difference between the screen grid and extraction grid.
  • The accelerator grid determines the ion beam energy by adjusting the voltage difference between the extraction grid and accelerator grid.
  • The system includes a deflector system with deflector plates to control the direction of the ion beam.

Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface modification in materials science

Problems Solved: - Precise control of ion beam parameters - Enhanced etching and deposition processes - Improved accuracy in material processing

Benefits: - Higher efficiency in material removal - Enhanced surface quality - Increased productivity in manufacturing processes

Commercial Applications: Title: Advanced Ion Beam Etching System for Semiconductor Manufacturing This technology can be utilized in semiconductor fabrication facilities to improve the precision and efficiency of etching processes, leading to higher quality semiconductor devices and increased production output.

Questions about Ion Beam Etching: 1. How does the voltage difference between the extraction grid and accelerator grid affect the ion beam energy? The voltage difference between the extraction grid and accelerator grid determines the energy of the ion beam, impacting the material removal rate and depth during etching processes.

2. What role does the deflector system play in controlling the direction of the ion beam? The deflector system, consisting of deflector plates, helps adjust the trajectory of the ion beam to target specific areas on the substrate for precise material removal or deposition.


Original Abstract Submitted

the present disclosure relates to an ion beam etching (ibe) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. the screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. the extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. the accelerator grid receives an accelerator grid voltage. a voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. the ibe system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

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