Taiwan semiconductor manufacturing co., ltd. (20240221858). DYNAMIC ERROR MONITOR AND REPAIR simplified abstract

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DYNAMIC ERROR MONITOR AND REPAIR

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Hiroki Noguchi of Hsinchu City (TW)

Ku-Feng Lin of New Taipei City (TW)

Yih Wang of Hsinchu City (TW)

DYNAMIC ERROR MONITOR AND REPAIR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240221858 titled 'DYNAMIC ERROR MONITOR AND REPAIR

The memory device described in the abstract includes a memory cell array with data memory cells and backup memory cells, an error table to record errors in the data memory cells, and a controller to replace faulty data memory cells with backup memory cells based on the error table.

  • Memory device with data memory cells and backup memory cells
  • Error table to record errors in data memory cells
  • Controller to replace faulty data memory cells with backup memory cells

Potential Applications: - Data storage systems - Computer memory modules - Embedded systems

Problems Solved: - Efficient error handling in memory devices - Enhanced data reliability and integrity

Benefits: - Improved data storage reliability - Minimized data loss due to memory cell failures

Commercial Applications: Title: "Enhanced Memory Device for Reliable Data Storage" This technology can be used in various commercial applications such as data centers, servers, and consumer electronics to ensure reliable data storage and prevent data loss.

Questions about the technology: 1. How does the error table help in identifying faulty data memory cells? 2. What are the advantages of using backup memory cells in a memory device?

Frequently Updated Research: Researchers are constantly working on improving error correction techniques in memory devices to enhance data reliability and storage efficiency.


Original Abstract Submitted

a memory device includes: a memory cell array comprising a plurality of memory cells, the plurality of memory cells comprising a plurality of data memory cells including a first data memory cell and a plurality of backup memory cells including a first backup memory cell; a storage storing an error table configured to record errors in the plurality of data memory cells, the error table including a plurality of error table entries, each error table entry corresponding to one of the plurality of data memory cell and having an address and a failure count; and a controller configured to replace the first data memory cell with the first backup memory cell based on the error table.