Taiwan semiconductor manufacturing co., ltd. (20240196762). MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 MEMORY DEVICES AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Device Technology
- 1.13 Original Abstract Submitted
MEMORY DEVICES AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chien-Min Lee of Hsinchu County (TW)
Tung-Ying Lee of Hsinchu City (TW)
Cheng-Hsien Wu of Hsinchu City (TW)
MEMORY DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196762 titled 'MEMORY DEVICES AND METHODS OF FORMING THE SAME
Simplified Explanation
The memory device described in the patent application includes a structure with a memory stack that is resistant to moisture. This stack is placed between layers of interconnect structure and includes various components like electrodes and a selector layer.
- The memory device has a unique memory stack structure that includes a moisture-resistant layer.
- The moisture-resistant layer is made of an amorphous material to protect the memory stack from environmental factors.
- This innovation aims to improve the reliability and longevity of the memory device by preventing moisture-related damage.
Key Features and Innovation
- Memory device with a memory stack resistant to moisture.
- Amorphous material used in the moisture-resistant layer.
- Protection against environmental factors to enhance reliability.
Potential Applications
The technology can be applied in various electronic devices requiring non-volatile memory with improved durability and resistance to moisture.
Problems Solved
The technology addresses the issue of moisture-related damage in memory devices, increasing their reliability and lifespan.
Benefits
- Enhanced reliability of memory devices.
- Longer lifespan due to protection against moisture.
- Improved performance in various electronic applications.
Commercial Applications
- Data storage devices.
- Consumer electronics.
- Industrial control systems.
Prior Art
Further research can be conducted in the field of memory device technology to explore similar innovations and advancements in moisture-resistant memory stacks.
Frequently Updated Research
Stay updated on advancements in memory device technology, particularly in the development of moisture-resistant memory stacks.
Questions about Memory Device Technology
How does the moisture-resistant layer in the memory stack improve the device's performance?
The moisture-resistant layer protects the memory stack from environmental factors, ensuring its longevity and reliability.
What are the potential implications of using amorphous materials in memory device technology?
Amorphous materials offer enhanced resistance to moisture and other environmental factors, making them ideal for improving the durability of memory devices.
Original Abstract Submitted
a memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. the memory stack includes a bottom electrode disposed over the substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. besides, at least one moisture-resistant layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture-resistant layer includes an amorphous material.
