Taiwan semiconductor manufacturing co., ltd. (20240196585). Methods, Structures and Devices for Intra-Connection Structures simplified abstract
Contents
Methods, Structures and Devices for Intra-Connection Structures
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Feng-Ming Chang of Zhubei City (TW)
Kuo-Hsiu Hsu of Zhongli City (TW)
Methods, Structures and Devices for Intra-Connection Structures - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196585 titled 'Methods, Structures and Devices for Intra-Connection Structures
The patent application describes a method for forming an intra-connection structure on a substrate, involving the creation of a gate structure and a source/drain region, the deposition of dielectric and spacer materials, and the formation of a conductive material to connect the source/drain region and the gate structure.
- Formation of a first gate structure and a first source/drain region on a substrate.
- Deposition of a first dielectric material on the first source/drain region.
- Creation of a spacer material on the first gate structure.
- Removal of the first dielectric material to expose part of the first source/drain region.
- Removal of part of the spacer material to expose part of the first gate structure.
- Formation of a first conductive material between the first gate structure and the first source/drain region to establish electrical connection.
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Efficient intra-connection structure formation - Enhanced electrical connectivity in devices - Improved performance of electronic components
Benefits: - Increased efficiency in manufacturing processes - Enhanced electrical performance of integrated circuits - Greater reliability in electronic devices
Commercial Applications: Title: "Advanced Intra-Connection Structure for Semiconductor Devices" This technology could be utilized in the production of various electronic devices such as smartphones, computers, and automotive electronics, leading to improved performance and reliability in these products.
Prior Art: Further research can be conducted in the field of semiconductor manufacturing processes, specifically focusing on methods for forming intra-connection structures in electronic devices.
Frequently Updated Research: Stay updated on advancements in semiconductor manufacturing techniques, particularly in the area of intra-connection structure formation, to ensure the implementation of the latest technologies in electronic device production.
Questions about Intra-Connection Structure: 1. How does the formation of the conductive material improve the electrical connectivity in the device? 2. What are the potential challenges in implementing this method in large-scale semiconductor manufacturing processes?
Original Abstract Submitted
systems and methods are provided for forming an intra-connection structure. a first gate structure and a first source/drain region adjacent to the first gate structure is formed on a substrate. a first dielectric material is disposed on the first source/drain region. a spacer material is formed on the first gate structure. the first dielectric material is removed to expose at least part of the first source/drain region. at least part of the spacer material is removed to expose at least part of the first gate structure. a first conductive material is formed between the first gate structure and the first source/drain region to electrically connect the first source/drain region and the first gate structure.
