Taiwan semiconductor manufacturing co., ltd. (20240194796). TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY simplified abstract
Contents
- 1 TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about UV-Attenuating Transistor Technology
- 1.13 Original Abstract Submitted
TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Katherine H. Chiang of Hsinchu (TW)
Neil Quinn Murray of Hsinchu (TW)
Ming-Yen Chuang of Hsinchu (TW)
TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194796 titled 'TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY
Simplified Explanation
The patent application describes a transistor device with a UV-attenuating layer to protect the channel layer from degradation caused by UV light.
Key Features and Innovation
- Transistor device with first and second source/drain regions, channel layer, gate insulator layer, and gate electrode.
- UV-attenuating layer added to protect the channel layer from characteristic degradation due to UV light exposure.
Potential Applications
The technology can be used in various electronic devices where UV light exposure may degrade the performance of the transistor.
Problems Solved
The UV-attenuating layer addresses the issue of characteristic degradation in transistor devices caused by UV light exposure.
Benefits
- Improved reliability and longevity of transistor devices.
- Enhanced performance in electronic devices exposed to UV light.
Commercial Applications
UV-Protected Transistors for Electronic Devices
This technology can be utilized in the manufacturing of electronic devices such as sensors, displays, and communication devices to ensure their longevity and performance in UV-exposed environments.
Prior Art
Readers can explore prior patents related to UV protection in electronic devices and semiconductor technologies to gain a deeper understanding of the field.
Frequently Updated Research
Stay updated on advancements in UV protection technologies for semiconductor devices to enhance the performance and reliability of electronic systems.
Questions about UV-Attenuating Transistor Technology
How does the UV-attenuating layer protect the channel layer in the transistor device?
The UV-attenuating layer acts as a barrier, absorbing or reflecting UV light to prevent degradation of the channel layer.
What are the potential long-term effects of UV exposure on transistor devices without a UV-attenuating layer?
Without UV protection, transistor devices may experience accelerated degradation, leading to reduced performance and reliability over time.
Original Abstract Submitted
a transistor device includes a first source/drain region and a second source/drain region spaced apart from each other; a channel layer electrically connected to the first and second source/drain regions; a gate insulator layer; a gate electrode isolated from the channel layer by the gate insulator layer; and a uv-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by uv light.
