Taiwan semiconductor manufacturing co., ltd. (20240194788). NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract

NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chien-Chang Su of Hsinchu (TW)

Yan-Ting Lin of Hsinchu (TW)

Chien-Wei Lee of Hsinchu (TW)

Bang-Ting Yan of Hsinchu (TW)

Chih Teng Hsu of Hsinchu (TW)

Chih-Chiang Chang of Hsinchu (TW)

Chien-I Kuo of Hsinchu (TW)

Chii-Horng Li of Hsinchu (TW)

Yee-Chia Yeo of Hsinchu (TW)

NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194788 titled 'NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The method for manufacturing a nanosheet semiconductor device involves several steps, including forming a poly gate on a nanosheet stack, recessing the nanosheet stack to create a source/drain recess, forming an inner spacer, and selectively etching the second nanosheet.

• Forming a poly gate on a nanosheet stack with alternating first and second nanosheets.
• Recessing the nanosheet stack to create a source/drain recess near the poly gate.
• Forming an inner spacer to cover the first nanosheet laterally.
• Selectively etching the second nanosheet to achieve the desired structure.

Potential Applications: - Semiconductor manufacturing - Nanotechnology research and development - Electronics industry advancements

Problems Solved: - Enhancing semiconductor device performance - Improving manufacturing processes - Increasing efficiency in nanosheet technology

Benefits: - Higher performance in semiconductor devices - Enhanced control over device structures - Potential for smaller and more efficient electronics

Commercial Applications: Title: Advanced Nanosheet Semiconductor Manufacturing for Enhanced Device Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved consumer electronics, faster processors, and more efficient energy usage in various industries.

Prior Art: Readers can explore prior research on nanosheet semiconductor devices, poly gate formation, and selective etching techniques to gain a deeper understanding of the technology's evolution.

Frequently Updated Research: Stay informed about the latest advancements in nanosheet semiconductor manufacturing, materials science, and semiconductor device design to keep up with industry trends and innovations.

Questions about Nanosheet Semiconductor Manufacturing: 1. What are the key advantages of using nanosheets in semiconductor devices? 2. How does the selective etching process impact the overall performance of the device?

Original Abstract Submitted

a method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.